High Speed Switching Silicon Carbide Diode ROHM SCS308APC9 for Power Electronics Applications

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Price: Negotiable

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Product Description

Product Overview

The SCS308AP is a Silicon Carbide (SiC) Schottky Barrier Diode designed for high-speed switching applications. It offers shorter recovery times, reduced temperature dependence, and high surge current capability, making it suitable for various power electronics applications.

Product Attributes

Brand: ROHM
Material: Silicon carbide epitaxial planar type
Packaging: Tube

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Reverse voltage (repetitive peak)	VRM				650	V
Reverse voltage (DC)	VR				650	V
Continuous forward current	IF	Tc= 135C			8	A
Repetitive peak forward current	IFRM				36	A
Surge non-repetitive forward current	IFSM	PW=10ms sinusoidal, Tj=25C			67	A
Surge non-repetitive forward current	IFSM	PW=10ms sinusoidal, Tj=150C			57	A
Surge non-repetitive forward current	IFSM	PW=10s square, Tj=25C			250	A
i2t value	i2dt	1PW10ms, Tj=25C			22	A2s
i2t value	i2dt	1PW10ms, Tj=150C			16	A2s
Total power dissipation	PD				57	W
Junction temperature	Tj				175	C
Range of storage temperature	Tstg		-55		+175	C
DC blocking voltage	VDC	IR =50A	650	-	-	V
Forward voltage	VF	IF=8A, Tj=25C	-	1.35	1.50	V
Forward voltage	VF	IF=8A, Tj=150C	-	1.44	1.71	V
Forward voltage	VF	IF=8A, Tj=175C	-	1.50	-	V
Reverse current	IR	VR=650V, Tj=25C	-	0.024	40	A
Reverse current	IR	VR=650V, Tj=150C	-	1.6	160	A
Reverse current	IR	VR=650V, Tj=175C	-	4.8	-	A
Total capacitive charge	QC	VR=400V, di/dt=350A/s	-	21	-	nC
Total capacitance	C	VR=1V, f=1MHz	-	400	-	pF
Total capacitance	C	VR=650V, f=1MHz	-	36	-	pF
Non-repetitive Avalanche Energy	Eava	L=1mH	-	110	-	mJ
Switching time	tC	VR=400V, di/dt=350A/s	-	15	-	ns
Thermal resistance (junction-to-case)	Rth(j-c)		-	1.89E-02	2.6	C/W