SP010N04AGHTD 100V N Channel MOSFET Featuring Low Gate Charge and TO 263 Package for Power Switching
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Product Description
Product Overview
The SP010N04AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The device is packaged in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04AGHTD
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on) | @10V | 3.9 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 130 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 90 | A | ||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | 841 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 180 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 3.9 | 5.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 4251 | - | pF |
| Output Capacitance | Coss | - | 658 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 26 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 69 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | nC | |
| Gate-Drain Charge | Qg d | - | 18 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, RL=2.5 , RG = 3.0 | - | 12 | - | nS |
| Rise Time | tr | - | 23 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 37 | - | nS | |
| Fall Time | tf | - | 16 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | - | 126 | - | nC | |
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