China N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance for sale

N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance

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Product Description

Product Overview

The SP30N22T1 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. It is suitable for applications such as DC/DC converters, load switches for portable devices, and battery switches. This MOSFET offers a continuous drain current of 6A and features low on-resistance at various gate-source voltages.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP30N22T1
Device Code: 30N22
Technology: TrenchFET Power MOSFET
Channel Type: N-Channel

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				30	V
RDS(on)		@10V		22		m
		@4.5V		25		m
		@2.5V		35		m
Continuous Drain Current	ID				6	A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS			12		V
Continuous Drain Current	ID				6	A
Pulsed Drain Current	IDM	1)			24	A
Power Dissipation	PD				1	W
Thermal Resistance from Junction to Ambient	RJA	2)			125	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55	~	+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250A	30			V
Zero gate voltage drain current	IDSS	VDS =24V,VGS = 0V			1	A
Gate-body leakage current	IGSS	VGS =12V, VDS = 0V		0.1		A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =250A	0.7	0.9	1.4	V
Drain-source on-resistance	RDS(on)	3) VGS =10V, ID =6A		22	28	m
		3) VGS =4.5V, ID =5A		25	35	m
		3) VGS =2.5V, ID =4A		35	50	m
Dynamic Characteristics 4)
Input Capacitance	Ciss	VDS =15V,VGS =0V,f =1MHz		812		pF
Output Capacitance	Coss			75		pF
Reverse Transfer Capacitance	Crss			51		pF
Total Gate Charge	Qg	VGS = 10V,VDS = 15V, ID=6A		9.1		nC
Gate-Source Charge	Qgs			1.8		-
Gate-Drain Charge	Qg			2.1		-
Switching Characteristics 4)
Turn-on delay time	td(on)	VGS=10V,VDS=15V, RL=3,ID=5A		9.2		ns
Turn-on rise time	tr			4.2		ns
Turn-off delay time	td(off)			48.1		ns
Turn-off fall time	tf			6.3		ns
Source-Drain Diode Characteristics
Diode Forward voltage	VSD	3) VGS =0V, IS=1A		1.2		V
Package Information
Package Type					SOT-23-3L
Dimensions (mm)		A	1.050		1.250
		A1	0.000		0.100
		A2	1.050		1.150
		b	0.300		0.500
		c	0.100		0.200
		D	2.820		3.020
		E1	1.500		1.700
		E	2.650		2.950
		e (Typ.)	0.950
		e1	1.800		2.000
		L	0.300		0.600
			0		8