N Channel Power MOSFET Shenzhen ruichips Semicon RU3070L Featuring Lead Free and Green Device Design
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Product Description
Product Overview
The RU3070L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance. It offers 100% avalanche tested and is available in lead-free and green devices (RoHS compliant). This MOSFET is ideal for load switch applications.
Product Attributes
- Brand: Ruichips
- Origin: CHINA
- Certifications: RoHS Compliant
- Package: TO252
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | 175 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Diode Continuous Forward Current (IS) | TC=25°C | 70 | A | ||
| Pulsed Drain Current (IDP) | TC=25°C | 280 | A | ||
| Continuous Drain Current (ID) | TC=25°C | 70 | A | ||
| Continuous Drain Current (ID) | TC=100°C | 49 | A | ||
| Maximum Power Dissipation (PD) | TC=25°C | 71 | W | ||
| Maximum Power Dissipation (PD) | TC=100°C | 36 | W | ||
| Thermal Resistance-Junction to Case (RθJC) | 2.1 | °C/W | |||
| Thermal Resistance-Junction to Ambient (RθJA) | 100 | °C/W | |||
| Avalanche Energy, Single Pulsed (EAS) | 196 | mJ | |||
| Electrical Characteristics (TC=25°C Unless Otherwise Noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250μA | 30 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 1 | 2 | 3 | V |
| Gate Leakage Current (IGSS) | VGS=±20V, VDS=0V | ±100 | nA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | 1 | μA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V, TJ=125°C | 30 | μA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=70A | 3.3 | 4.3 | mΩ | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=56A | 5 | 6 | mΩ | |
| Diode Forward Voltage (VSD) | ISD=70A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time (trr) | ISD=70A, dlSD/dt=100A/μs | 35 | ns | ||
| Reverse Recovery Charge (Qrr) | 23 | nC | |||
| Gate Resistance (RG) | 1.9 | Ω | |||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 2200 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 370 | pF | ||
| Reverse Transfer Capacitance (Crss) | 250 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=15V, IDS=70A, VGEN=10V, RG=5Ω | 7 | ns | ||
| Turn-on Rise Time (tr) | 12 | ns | |||
| Turn-off Delay Time (td(OFF)) | 28 | ns | |||
| Turn-off Fall Time (tf) | 11 | ns | |||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=24V, IDS=70A, VGS=10V | 32 | nC | ||
| Gate-Source Charge (Qgs) | 5 | nC | |||
| Gate-Drain Charge (Qgd) | 10 | nC | |||
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