Energy 60V P Channel MOSFET Siliup SP60P11TH with Fast Switching and Low Gate Charge Characteristics
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Product Description
Product Overview
The SP60P11H is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P11H
- Device Code: 60P11
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 11 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 14 | m | ||
| Continuous Drain Current | ID | -80 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | -80 | A | ||
| Continuous Drain Current | ID | (TC=100) | -53 | A | ||
| Pulsed Drain Current | IDM | -320 | A | |||
| Single Pulse Avalanche Energy | EAS | 506 | mJ | |||
| Power Dissipation | PD | (TC=25) | 150 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 11 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | 14 | 18.5 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 7700 | pF | ||
| Output Capacitance | Coss | 489 | pF | |||
| Reverse Transfer Capacitance | Crss | 364 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | 85.5 | nC | ||
| Gate-Source Charge | Qgs | 12.1 | nC | |||
| Gate-Drain Charge | Qg | 23.2 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3.3, ID=-1A | 9.8 | nS | ||
| Rise Time | Tr | 6.1 | nS | |||
| Turn-Off Delay Time | Td(off) | 44 | nS | |||
| Fall Time | Tf | 12.7 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -80 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 50 | nS | ||
| Reverse Recovery Charge | Qrr | 69 | nC | |||
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