High frequency power switching mosfet with low gate charge Siliup SP30P11P8 p channel 30 volt device

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Product Description

Product Overview

The SP30P11P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP30P11P8
Device Code: 30P11
Package Type: SOP-8L
Material: Silicon

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
V(BR)DSS			-30			V
RDS(on)TYP		@-10V		11		m
		@-4.5V		17		m
ID			-12			A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)	-30			V
Gate-Source Voltage	VGS	(Ta=25)		20		V
Continuous Drain Current	ID	(Ta=25)		-12		A
Pulsed Drain Current	IDM	(Ta=25)		-48		A
Single Pulse Avalanche Energy	EAS	(Ta=25)		25		mJ
Power Dissipation	PD	(Ta=25)		2		W
Junction-to-Ambient Thermal Resistance	RJA	(Ta=25)		62.5		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V, VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-10A		11	14	m
		VGS=-4.5V, ID=-8A		17	23	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V, VGS=0V, f=1MHz		1915		pF
Output Capacitance	Coss	VDS=-15V, VGS=0V, f=1MHz		300		pF
Reverse Transfer Capacitance	Crss	VDS=-15V, VGS=0V, f=1MHz		210		pF
Total Gate Charge	Qg	VDS=-15V, VGS=-10V, ID=-5A		25		nC
Gate-Source Charge	Qgs	VDS=-15V, VGS=-10V, ID=-5A		5		nC
Gate-Drain Charge	Qg d	VDS=-15V, VGS=-10V, ID=-5A		6		nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V, VGS=-10V, RG=3, ID=-10A		9		nS
Rise Time	Tr	VDD=-15V, VGS=-10V, RG=3, ID=-10A		11		nS
Turn-Off Delay Time	Td(off)	VDD=-15V, VGS=-10V, RG=3, ID=-10A		44		nS
Fall Time	Tf	VDD=-15V, VGS=-10V, RG=3, ID=-10A		21		nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V, IS=-1A			-1.2	V
Maximum Body-Diode Continuous Current	IS			-12		A
Reverse recovery time	Trr	IS=-10A, di/dt=100A/us, Tj=25		15		nS
Reverse recovery charge	Qrr	IS=-10A, di/dt=100A/us, Tj=25		5		nC
Package Information (SOP-8L)
Symbol	Dimensions (mm)	Min.	Max.
A		1.35	1.75
A1		0.10	0.25
A2		1.35	1.55
b		0.33	0.51
c		0.17	0.25
D		4.80	5.00
e	(REF.)	1.27
E		5.80	6.20
E1		3.80	4.00
L		0.40	1.27
		0	8