Durable Shenzhen ruichips Semicon RU60E25L N Channel Power MOSFET ideal for power management systems

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Product Description

RU60E25L N-Channel Advanced Power MOSFET

The RU60E25L is an N-Channel Advanced Power MOSFET designed for power management applications. It features a super high-density cell design, ESD protection, and is reliable and rugged. This device is available in lead-free and green (RoHS compliant) versions.

Product Attributes

Brand: Ruichips Semiconductor
Origin: China
Certifications: RoHS Compliant

Technical Specifications

Symbol	Parameter	Test Condition	Unit	Min.	Typ.	Max.
VDSS	Drain-Source Voltage		V			60
VGSS	Gate-Source Voltage		±V			20
TJ	Maximum Junction Temperature		°C			175
TSTG	Storage Temperature Range		°C	-55		175
ID	Continuous Drain Current (VGS=10V)	TC=25°C	A			25‡†
ID	Continuous Drain Current (VGS=10V)	TC=100°C	A			19
IDP	300μs Pulse Drain Current	TC=25°C	A			100†
PD	Maximum Power Dissipation	TC=25°C	W			50
PD	Maximum Power Dissipation	TC=100°C	W			25
RθJC	Thermal Resistance-Junction to Case		°C/W		3
EAS	Avalanche Energy, Single Pulsed	‡	mJ			150
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250μA	V	60
IDSS	Zero Gate Voltage Drain Current	VDS= 60V, VGS=0V	μA		1
IDSS	Zero Gate Voltage Drain Current	TJ=85°C	μA			30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250μA	V	1.5	2	2.7
IGSS	Gate Leakage Current	VGS=±16V, VDS=0V	μA			±10
RDS(ON)	Drain-Source On-state Resistance	VGS= 10V, IDS=25A	mΩ		35	40
RDS(ON)	Drain-Source On-state Resistance	VGS= 4.5V, IDS=17A	mΩ		42	65
VSD	Diode Forward Voltage	ISD=25A, VGS=0V	V		0.8	1.2
trr	Reverse Recovery Time	ISD=25A, dlSD/dt=100A/μs	ns			40
Qrr	Reverse Recovery Charge	ISD=25A, dlSD/dt=100A/μs	nC			70
Ciss	Input Capacitance	VGS=0V, VDS= 30V, Frequency=1.0MHz	pF		1340
Coss	Output Capacitance	VGS=0V, VDS= 30V, Frequency=1.0MHz	pF		285
Crss	Reverse Transfer Capacitance	VGS=0V, VDS= 30V, Frequency=1.0MHz	pF		90
td(ON)	Turn-on Delay Time	VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω	ns		10
tr	Turn-on Rise Time	VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω	ns		13
td(OFF)	Turn-off Delay Time	VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω	ns		28
tf	Turn-off Fall Time	VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω	ns		15
Qg	Total Gate Charge	VDS=48V, VGS= 10V, IDS=25A	nC		55
Qgs	Gate-Source Charge	VDS=48V, VGS= 10V, IDS=25A	nC		8
Qgd	Gate-Drain Charge	VDS=48V, VGS= 10V, IDS=25A	nC		28