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China Fast Switching MOSFET Siliup SP47M65TF 650V with Low Gate Charge and 47A Continuous Drain Current in TO247 Package for sale

Fast Switching MOSFET Siliup SP47M65TF 650V with Low Gate Charge and 47A Continuous Drain Current in TO247 Package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP47M65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for fast switching applications. It features low gate charge and low RDS(on), with a continuous drain current of 47A at 25. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-247 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 47M65
  • Package: TO-247 (Pinout: 1:G, 2:D, 3:S)
  • Circuit Diagram Marking: 47M65 :Device Code, ** :Week Code
  • Origin: China (implied by www.siliup.com and company name)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 650 V
RDS(on) RDS(on) 10V 60 m
Continuous Drain Current ID 47 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current (Tc=25) ID 47 A
Continuous Drain Current (Tc=100) ID 29 A
Pulsed Drain Current IDM 188 A
Single Pulse Avalanche Energy1 EAS 1160 mJ
Power Dissipation (Tc=25) PD 391 W
Thermal Resistance Junction-to-Case RJC 0.32 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 - - V
Drain-Source Leakage Current IDSS VDS = 520V, VGS = 0V - - 1 uA
Gate-Source Leakage Current IGSS VGS = 30V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 23A - 60 70 m
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 3080 - pF
Output Capacitance Coss - 140 - pF
Reverse Transfer Capacitance Crss - 7 - pF
Total Gate Charge Qg VDS=480V , VGS=10V , ID=23A - 194 - nC
Gate-Source Charge Qgs - 35 -
Gate-Drain Charge Qgd - 90 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=480V, VGS=10V , RG=2, ID=10A - 22 - nS
Rise Time tr - 10 -
Turn-Off Delay Time td(off) - 90 -
Fall Time tf - 5 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 47 A
Reverse recover time trr IS=23A, di/dt=100A/us, TJ=25 - 710 - nS
Reverse recovery charge Qrr - 19 - uC
Package Information (TO-247)
Symbol Dimensions In Millimeters (Min./Max.) Dimensions In Inches (Min./Max.)
A 4.850 / 5.150 0.191 / 0.200
A1 2.200 / 2.600 0.087 / 0.102
b2 1.800 / 2.200 0.071 / 0.087
b 1.000 / 1.400 0.039 / 0.055
b1 2.800 / 3.200 0.110 / 0.126
c 0.500 / 0.700 0.020 / 0.028
c1 1.900 / 2.100 0.075 / 0.083
D 15.450 / 15.750 0.608 / 0.620
E1 3.500 (REF.) 0.138 (REF.)
E2 3.600 (REF.) 0.142 (REF.)
L 40.900 / 41.300 1.610 / 1.626
L1 24.800 / 25.100 0.976 / 0.988
L2 20.300 / 20.600 0.799 / 0.811
7.100 / 7.300 0.280 / 0.287
e 5.450 (TYP.) 0.215 (TYP.)
H1 5.980 (REF.) 0.235 (REF.)
h 0.000 / 0.300 0.000 / 0.012

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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