Complementary MOSFET device Siliup SP1049CP8 with 100V drain source voltage and SOP8L lead free package

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Product Description

Product Overview

The SP1049CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: Complementary MOSFET
Package: SOP-8L
Certifications: Lead free product acquired

Technical Specifications

Parameter	Symbol	N-Channel Conditions	N-Channel Value	P-Channel Conditions	P-Channel Value	Units
Drain-Source Voltage	V(BR)DSS		100V		-100V	V
Drain-Source Voltage	V(BR)DSS					V
RDS(on) Typ	RDS(on)	VGS=10V	40m	VGS=-10V	90m	m
RDS(on) Typ	RDS(on)	VGS=4.5V	45m	VGS=-4.5V	100m	m
ID	ID		6A		-6A	A
ID	ID					A
Device Code			1049C
Continuous Drain Current (N-Channel)	ID	Ta=25	6 A			A
Continuous Drain Current (P-Channel)	ID			Ta=25	-6 A	A
Pulsed Drain Current (N-Channel)	IDM	Ta=25	24 A			A
Pulsed Drain Current (P-Channel)	IDM			Ta=25	-24 A	A
Single Pulse Avalanche Energy (N-Channel)	EAS	VDD=50V, VGS=10V, L=0.5mH, RG=25	10.5 mJ			mJ
Single Pulse Avalanche Energy (P-Channel)	EAS			VDD=-50V, VGS=-10V, L=0.5mH, RG=25	24 mJ	mJ
Power Dissipation	PD	Ta=25	2.5 W	Ta=25	2.5 W	W
Thermal Resistance Junction-to-Ambient	RJA		50 /W		50 /W	/W
Storage Temperature Range	TSTG		-55 to 150		-55 to 150
Operating Junction Temperature Range	TJ		-55 to 150		-55 to 150
N-Channel Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100 V			V
N-Channel Drain-Source Leakage Current	IDSS	VDS=80V , VGS=0V , TJ=25	1 uA			uA
N-Channel Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	100 nA	VGS=20V , VDS=0V	100 nA	nA
N-Channel Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0 to 2.5 V	VGS=VDS , ID =-250uA	-1.0 to -2.5 V	V
N-Channel Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=5A	40 to 50 m			m
N-Channel Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=3A	45 to 60 m			m
N-Channel Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	2605 pF	VDS=-50V , VGS=0V , f=1MHz	2410 pF	pF
N-Channel Output Capacitance	Coss		109 pF		81 pF	pF
N-Channel Reverse Transfer Capacitance	Crss		67 pF		68 pF	pF
N-Channel Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=5A	17 nC	VDS=-50V , VGS=-10V , ID=-5A	21 nC	nC
N-Channel Gate-Source Charge	Qgs		5.5 nC		3 nC	nC
N-Channel Gate-Drain Charge	Qg		3.4 nC		3.5 nC	nC
N-Channel Turn-On Delay Time	Td(on)	VDD=50V, VGS=10V , RG=3, ID=10A	38.1 nS	VDD=-50V VGS=-10V , RG=3, ID=-5A	9 nS	nS
N-Channel Rise Time	Tr		12 nS		28 nS	nS
N-Channel Turn-Off Delay Time	Td(off)		54 nS		79 nS	nS
N-Channel Fall Time	Tf		16.1 nS		83 nS	nS
N-Channel Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	1.2 V	VGS=0V , IS=-1A , TJ=25	-1.2 V	V
N-Channel Maximum Body-Diode Continuous Current	IS		6 A		-6 A	A
N-Channel Reverse Recovery Time	Trr	IS=5A, di/dt=100A/us, TJ=25	40 nS	IS=-3A, di/dt=-100A/us, Tj=25	70 nS	nS
N-Channel Reverse Recovery Charge	Qrr		43 nC		135 nC	nC
P-Channel Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA		-100 V	V
P-Channel Drain-Source Leakage Current	IDSS	VDS=-80V , VGS=0V , TJ=25		-1 uA	uA
P-Channel Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-5A		90 to 115 m	m
P-Channel Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-3A		100 to 135 m	m
Package Dimensions		Symbol	Min.	Max.	Units
	A	1.35	1.75	mm
	A1	0.10	0.25	mm
	A2	1.35	1.55	mm
	b	0.33	0.51	mm
	c	0.17	0.25	mm
	D	4.80	5.00	mm
	e	1.27	REF.	mm
	E	5.80	6.20	mm
	E1	3.80	4.00	mm
	L	0.40	1.27	mm
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