Power MOSFET 40V N Channel Siliup SP40N01GTD with Low Gate Charge and High Frequency Circuit Compatibility
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N01GTD is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N01G
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 1.5 | m | |||
| RDS(on)TYP | @4.5V | 2.0 | m | |||
| ID | 180 | A | ||||
| Absolute maximum ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 180 | A | |||
| Continuous Drain Current (Tc=100) | ID | 120 | A | |||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1089 | mJ | |||
| Power Dissipation (Tc=25) | PD | 180 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.5 | 1.9 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=50A | - | 2 | 2.7 | m |
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5500 | - | pF |
| Output Capacitance | Coss | - | 1850 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 128 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qg | - | 12 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 8.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 55 | - | nS |
| Reverse Recovery Charge | Qrr | - | 53 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 - 4.670 | 0.176 - 0.184 | ||||
| A1 | 0.000 - 0.150 | 0.000 - 0.006 | ||||
| B | 1.120 - 1.420 | 0.044 - 0.056 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.310 - 0.530 | 0.012 - 0.021 | ||||
| c1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| D | 10.010 - 10.310 | 0.394 - 0.406 | ||||
| E | 8.500 - 8.900 | 0.335 - 0.350 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| L | 14.940 - 15.500 | 0.588 - 0.610 | ||||
| L1 | 4.950 - 5.450 | 0.195 - 0.215 | ||||
| L2 | 2.340 - 2.740 | 0.092 - 0.108 | ||||
| L3 | 1.300 - 1.700 | 0.051 - 0.067 | ||||
| 0 - 8 | 0 - 8 | |||||
| V | 5.600 REF. | 0.220 REF. | ||||
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