Power MOSFET 250V N Channel Siliup SP025N16GHTF with Split Gate Trench Technology and Low On Resistance
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP025N16GHTF is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP025N16GHTF
- Package: TO-247
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 250 | V | |||
| On-Resistance (Typical) | RDS(on) | @10V | 16 | m | ||
| Continuous Drain Current | ID | 85 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 250 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 85 | A | |||
| Continuous Drain Current (Tc=100) | ID | 57 | A | |||
| Pulsed Drain Current | IDM | 340 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation (Tc=25) | PD | 363 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.34 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 250 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=125V , VGS=0V , f=1MHz | - | 5654 | - | pF |
| Output Capacitance | Coss | - | 362 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10.9 | - | pF | |
| Total Gate Charge | Qg | VDS=125V , VGS=10V , ID=20A | - | 71 | - | nC |
| Gate-Source Charge | Qgs | - | 22.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 9.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=125V , VGS=10V , RG=10 ID=20A | - | 16.5 | - | nS |
| Rise Time | tr | - | 23.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 32 | - | nS | |
| Fall Time | tf | - | 16.6 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 85 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=200A/us, TJ=25 | - | 168 | - | nS |
| Reverse Recovery Charge | Qrr | - | 795 | - | nC | |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP025N16GHTF | TO-247 | 30 |
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