N Channel MOSFET Siliup SP30N06P8 Featuring 30V Rating Low Gate Charge and SOP 8L Package for Switching
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Product Description
Product Overview
The SP30N06P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is available in an SOP-8L package and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOP-8L
- Device Code: SP30N06P8
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 6.5 | m | ||
| RDS(on) TYP | RDS(on) | @4.5V | 8 | m | ||
| ID | ID | 13 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 13 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 52 | A | ||
| Single pulsed avalanche energy1 | EAS | (Ta=25) | 56 | mJ | ||
| Power Dissipation | PD | (Ta=25) | 2.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 50 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 6.5 | 8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=5A | - | 8 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1378 | - | pF |
| Output Capacitance | Coss | VDS=20V , VGS=0V , f=1MHz | - | 195 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V , VGS=0V , f=1MHz | - | 155 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | - | 33.7 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=10V , ID=10A | - | 8.5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=15V , VGS=10V , ID=10A | - | 7.5 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V, VGS=10V , RG=3, ID=10A | - | 7.5 | - | nS |
| Rise Time | tr | VDD=15V, VGS=10V , RG=3, ID=10A | - | 14.5 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=15V, VGS=10V , RG=3, ID=10A | - | 35.2 | - | nS |
| Fall Time | tf | VDD=15V, VGS=10V , RG=3, ID=10A | - | 9.6 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 13 | A | |
| Reverse Recovery Time | trr | IS=10A, di/dt=100A/us, TJ=25 | - | 13 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100A/us, TJ=25 | - | 4 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1EAS Test condition: VDD=15V, VGS =10V, L = 0.5mH, Rg=25.
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