P Channel MOSFET 100V 4A Continuous Drain Current Siliup SP010P190T1 Surface Mount Low On Resistance

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Product Description

Product Overview

The SP010P190T1 is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -4A and features low on-resistance characteristics at typical operating voltages.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010P190T1
Device Code: 10P19
Package: SOT-23-3L
Technology: P-Channel MOSFET

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-100			V
Static Drain-Source On-Resistance	RDS(on)	@ -10V		190	250	m
Static Drain-Source On-Resistance	RDS(on)	@ -4.5V		210	300	m
Continuous Drain Current	ID				-4	A
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	(Ta=25)	-100			V
Gate-Source Voltage	VGSS	(Ta=25)		20		V
Continuous Drain Current	ID	(Ta=25)			-4	A
Pulse Drain Current	IDM	(Tested, Ta=25)			-16	A
Power Dissipation	PD	(Ta=25)			1.5	W
Thermal Resistance Junction-to-Ambient	RJA	(Ta=25)		83		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-100			V
Drain-Source Leakage Current	IDSS	VDS=-80V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-0.5A		190	250	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-0.4A		210	300	m
Input Capacitance	Ciss	VDS=-25V , VGS=0V , f=1MHz		1239		pF
Output Capacitance	Coss	VDS=-25V , VGS=0V , f=1MHz		42		pF
Reverse Transfer Capacitance	Crss	VDS=-25V , VGS=0V , f=1MHz		38		pF
Total Gate Charge	Qg	VDS=-60V , VGS=-10V , ID=-3A		17.5		nC
Gate-Source Charge	Qgs	VDS=-60V , VGS=-10V , ID=-3A		2.8		nC
Gate-Drain Charge	Qgd	VDS=-60V , VGS=-10V , ID=-3A		3.2		nC
Turn-On Delay Time	td(on)	VDD=-50V VGS=-10V , RG=10, ID=-3A		9.1		nS
Turn-On Rise Time	tr	VDD=-50V VGS=-10V , RG=10, ID=-3A		14.9		nS
Turn-Off Delay Time	td(off)	VDD=-50V VGS=-10V , RG=10, ID=-3A		57.4		nS
Turn-Off Fall Time	tf	VDD=-50V VGS=-10V , RG=10, ID=-3A		34.4		nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information
Symbol	Dimensions (mm)	Min.	Max.	Typ.
A		1.050	1.250
A1		0.000	0.100
A2		1.050	1.150
b		0.300	0.500
c		0.100	0.200
D		2.820	3.020
E		1.500	1.700
E1		2.650	2.950
e		0.950
e1				1.800	2.000
L		0.300	0.600
		0	8