P Channel MOSFET Siliup SP2006KDTW 20V Surface Mount Device Suitable for Battery Management Systems

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Product Description

Product Overview

The SP2006KDTW is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, with integrated ESD protection. This MOSFET is suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Device Code: 06K
Package: SOT-363

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			-20		V
On-Resistance	RDS(on)	-4.5V		0.65
On-Resistance	RDS(on)	-2.5V		0.85
Continuous Drain Current	ID			-0.66		A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS			-20		V
Gate-Source Voltage	VGS			12		V
Continuous Drain Current	ID			-0.66		A
Pulsed Drain Current	IDM			-1.2		A
Power Dissipation	PD			0.15		W
Thermal Resistance Junction to Ambient	RJA			833		/W
Junction Temperature	TJ			150
Storage Temperature	TSTG		-55		+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250A	-20			V
Zero gate voltage drain current	IDSS	VDS =-16V,VGS = 0V		-1		A
Gate-body leakage current	IGSS	VGS = 10VVDS =0V		10		A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250A	-0.35	-0.65	-1	V
Drain-source on-resistance	RDS(on)	VGS = -4.5V, ID = -0.5A		0.65	0.75
Drain-source on-resistance	RDS(on)	VGS = -2.5V, ID = -0.2A		0.85	1.0
Drain-source on-resistance	RDS(on)	VGS = -1.8V, ID = -0.1A			1.2
Input Capacitance	Ciss	VDS =-16V,VGS =0V,f =1MHz		113		pF
Output Capacitance	Coss	VDS =-16V,VGS =0V,f =1MHz		15		pF
Reverse Transfer Capacitance	Crss	VDS =-16V,VGS =0V,f =1MHz		9		pF
Turn-on delay time	td(on)	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		9		ns
Turn-on rise time	tr	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		5.7		ns
Turn-off delay time	td(off)	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		32.6		ns
Turn-off fall time	tf	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		20.3		ns
Diode Forward voltage	VSD	VGS =0V, IS=-0.5 A		-1.2		V
Package Information (SOT-363)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.00
A1		0.00	0.10
B		0.10	0.30
b1		1.30
D		1.80	2.20
E		2.00	2.20
E1		1.15	1.35
e		0.65 (TYP.)
L		0.10	0.25
L1		0.15	0.4