Power MOSFET Siliup SP40N03BTH 40V N Channel Device with Low Gate Charge and Avalanche Energy Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N03BTH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N03BTH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) Typ. | RDS(on) | @10V | 3.5 | m | ||
| RDS(on) Typ. | RDS(on) | @4.5V | 5.5 | m | ||
| Continuous Drain Current | ID | 120 | A | |||
| Single Pulse Avalanche Energy | EAS | 289 | mJ | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | 120 | A | |||
| Continuous Drain Current (TC=100) | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 480 | A | |||
| Power Dissipation (TC=25) | PD | 110 | W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.5 | 5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 5.5 | 8 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5400 | - | pF |
| Output Capacitance | Coss | - | 970 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 380 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 17 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=2A | - | 15 | - | nS |
| Rise Time | Tr | - | 18 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 23 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 23 | - | nS |
| Reverse Recovery Charge | Qrr | - | 12 | - | nC | |
Package Dimensions (TO-252):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
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