650V Super Junction MOSFET Siliup SP47MF65TF for Fast Switching PWM and Power Management Applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP47MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 47MF65
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 65 | m | ||
| Continuous Drain Current | ID | 47 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 47 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 29 | A | ||
| Pulsed Drain Current | IDM | 188 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 1160 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 391 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.32 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 23A | - | 65 | 75 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 3080 | - | pF |
| Output Capacitance | Coss | - | 140 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 7 | - | pF | |
| Total Gate Charge | Qg | VDS=480V , VGS=10V , ID=23A | - | 194 | - | nC |
| Gate-Source Charge | Qgs | - | 35 | - | ||
| Gate-Drain Charge | Qgd | - | 90 | - | ||
| Turn-On Delay Time | Td(on) | VDD=480V, VGS=10V , RG=2, ID=10A | - | 22 | - | nS |
| Rise Time | Tr | - | 10 | - | ||
| Turn-Off Delay Time | Td(off) | - | 90 | - | nS | |
| Fall Time | Tf | - | 5 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 47 | A | |
| Reverse recover time | Trr | IS=23A, di/dt=100A/us, Tj=25 | - | 210 | - | nS |
| Reverse recovery charge | Qrr | - | 1.2 | - | uC | |
TO-247 Package Dimensions (Millimeters/Inches)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H1 | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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