1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance
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Product Description
Product Overview
The S1M075120H1 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling effort and requirements, efficiency improvement, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: (Sichain)
- Product Line: Silicon Carbide Power MOSFET
- Model: S1M075120H1
- Package Type: TO-247-4L
- Channel Type: N Channel Enhancement
- Certifications: Halogen free, RoHS compliant
- Origin: (Ningbo)
- Datasheet Version: V02_00
- Datasheet Date: 2023.09.15
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 38 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 27 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 80 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 214 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1.8 - 8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.7 | C/W | Fig.21 | |
| Rth(j-a) | Thermal resistance from junction to ambient | 35 | C/W | Not subject to production test. Parameter verified by design/characterization. | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 5mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | Max 10 |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 70 / 85 | m | VGS = 18V, ID = 20A | Fig.4,5,6 |
| RDS(on) | Current drain-source on-state resistance | 125 | m | VGS = 18V, ID = 20A, TJ = 175C | |
| gfs | Transconductance | 10 | S | VDS = 20V, ID = 20A | Fig.7 |
| gfs | Transconductance | 9.2 | S | VDS = 20V, ID = 20A, TJ = 175C | |
| Rg,int | Internal gate resistance | 1.5 | VAC = 25mV, f = 1MHz | ||
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 10A | Fig.8,9,10 |
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A, TJ = 175C | |
| Ciss | Input capacitance | 920 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 1MHz | Fig.17,18 |
| Coss | Output capacitance | 57 | pF | ||
| Crss | Reverse capacitance | 3.9 | pF | ||
| Eoss | Coss stored energy | 35 | J | Fig.16 | |
| Qgs | Gate source charge | 7 | nC | VDS = 800V, VGS = -4/+18V, ID = 20A | Fig.12 |
| Qgd | Gate drain charge | 19 | nC | ||
| Qg | Gate charge | 40 | nC | ||
| Eon | Turn on switching energy | 82 | J | VDD = 800V, VGS = -4/+15V, ID = 20A, Rg = 0, L = 120uH | Fig.25 |
| Eoff | Turn off switching energy | 24 | J | ||
| tdon | Turn on delay time | 10 | ns | Fig.27 | |
| tr | Rise time | 8 | ns | ||
| tdoff | Turn off delay time | 15 | ns | ||
| tf | Fall time | 8 | ns | ||
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 10A | Fig.8,9,10 |
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A, TJ = 175C | |
| IS | Continuous diode forward current | 38 | A | Tc = 25C | Note1 |
| trr | Reverse recovery time | 37.6 | nS | VR = 800V, VGS = -4V, ID = 20A, di/dt = 2670A/S, TJ = 150C | |
| Qrr | Reverse recovery charge | 306 | nC | ||
| Irrm | Peak reverse recovery current | 16 | A |
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