N Channel MOSFET Siliup SP013N05AGHTD with fast switching speed and high avalanche energy capability
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP013N05AGHTD is a 135V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP013N05AGHTD
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 135 | V | |||
| RDS(on) | RDS(on) | @10V | 4.6 | m | ||
| Continuous Drain Current | ID | 160 | A | |||
| Absolute Maximum Ratings | (Ta=25, unless otherwise noted) | |||||
| Drain-Source Voltage | VDS | 135 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 160 | A | |||
| Continuous Drain Current (Tc=100) | ID | 105 | A | |||
| Pulsed Drain Current | IDM | 640 | A | |||
| Single Pulse Avalanche Energy | EAS | 1024 | mJ | |||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | (Ta=25, unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 135 | 150 | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 108V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 4.6 | 6 | m |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 6620 | - | pF |
| Output Capacitance | Coss | - | 536 | - | ||
| Reverse Transfer Capacitance | Crss | - | 19 | - | ||
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 82 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | ||
| Gate-Drain Charge | Qgd | - | 23 | - | ||
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 23 | - | nS |
| Rise Time | Tr | - | 39 | - | ||
| Turn-Off Delay Time | Td(off) | - | 49 | - | ||
| Fall Time | Tf | - | 18 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 160 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 132 | - | nS |
| Reverse Recovery Charge | Qrr | - | 466 | - | nC | |
| Package Information | (TO-263) | |||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. |
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