SG2M023120J1J Silicon Carbide MOSFET Featuring High Blocking Voltage and Low Reverse Recovery Charge
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Product Description
Product Overview
The SG2M023120J1J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics lead to reduced cooling efforts, improved efficiency, increased power density, and the ability to increase system switching frequency. It is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Product Line: TriQSiCTM
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Certifications: RoHS compliant, REACH compliant
Technical Specifications
| Type | VDS (V) | IDS (A) | RDS(on), typ (m) | TJ,max (C) | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M023120J1J | 1200 | 107 (TC = 25C) | 23 (VGS = 18V, ID = 49A, TJ = 25C) | 175 | SG2M023120J1J | TO-263-7L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 107 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 76 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 214 | A | Pulse width limited by TJ,max | Fig.22 |
| PD | Power dissipation | 484 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.25 - 0.31 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 14mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 14mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 28 - 38 | m | VGS = 15V, ID = 49A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 44 | m | VGS = 15V, ID = 49A, TJ = 175C | |
| RDS(on) | Current drain-source on-state resistance | 23 - 31 | m | VGS = 18V, ID = 49A | |
| RDS(on) | Current drain-source on-state resistance | 42 | m | VGS = 18V, ID = 49A, TJ = 175C | |
| gfs | Transconductance | 36 | S | VDS = 20V, ID = 49A | Fig.7 |
| gfs | Transconductance | 33 | S | VDS = 20V, ID = 49A, TJ = 175C | |
| Rg,int | Internal gate resistance | 4.6 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 2780 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 147 | pF | ||
| Crss | Reverse capacitance | 7.4 | pF | ||
| Eoss | Coss stored energy | 81 | J | Fig.16 | |
| Qgs | Gate source charge | 28 | nC | VDS = 800V, VGS = -4/+18V, ID = 49A | Fig.12 |
| Qgd | Gate drain charge | 26 | nC | ||
| Qg | Gate charge | 95 | nC | ||
| Eon | Turn on switching energy | 652 | J | VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 186 | J | ||
| tdon | Turn on delay time | 25 | ns | Fig.27 | |
| tr | Rise time | 14 | ns | ||
| tdoff | Turn off delay time | 42 | ns | ||
| tf | Fall time | 11 | ns | ||
| VSD | Diode forward voltage | 3.7 | V | VGS = -4V, ISD = 24.5A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.3 | V | VGS = -4V, ISD = 24.5A, TJ = 175C | |
| IS | Continuous diode forward current | 107 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 29 | ns | VR = 800V, VGS = -4V, ISD = 49A, di/dt = 3510A/s, TJ = 175C | |
| Qrr | Reverse recovery charge | 448 | nC | ||
| Irrm | Peak reverse recovery current | 27 | A |
Package Drawing
TO-263-7L-B
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