TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics
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Product Description
Product Overview
The SP2306T2J is a 30V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. Featuring TrenchFET technology, it offers low on-resistance at various gate-source voltages (38m typ. at 10V and 45m typ. at 4.5V) and a continuous drain current of 3.6A. This MOSFET is suitable for applications such as DC/DC converters and load switches for portable devices.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Model: SP2306T2J
- Technology: TrenchFET Power MOSFET
- Channel Type: N-Channel
- Package: SOT-23
- Device Code: S6
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Ta=25) | ID | 3.6 | A | |||
| Pulsed Drain Current | IDM | 14.4 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance (Junction to Ambient, t5s) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 0.5 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.5 | 2 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3.5A | 38 | 47 | m | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =2.8A | 45 | 65 | m | |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS =15V,VGS =5V,ID =2.5A | 3.0 | 4.5 | nC | |
| Total Gate Charge | Qgt | VDS =15V,VGS =10V,ID =2.5A | 6 | 9 | ||
| Gate-source charge | Qgs | 1.6 | ||||
| Gate-drain charge | Qgd | 0.6 | ||||
| Gate resistance | Rg | f =1.0MHz | 2.5 | 7.5 | ||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 305 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Turn-on delay time | td(on) | VDD=15V, RL=15, ID 1A, VGEN=10V,Rg=6 | 7 | 11 | ns | |
| Turn-on rise time | tr | 12 | 18 | ns | ||
| Turn-off delay time | td(off) | 14 | 25 | ns | ||
| Turn-off fall time | tf | 6 | 10 | ns | ||
| Source-Drain Diode Characteristics | ||||||
| Body diode voltage | VSD | IS=1.25A,VGS=0V | 0.8 | 1.2 | V | |
Package Dimensions (SOT-23):
| Symbol | Dimensions (mm) |
|---|---|
| A | 0.90 - 1.15 |
| A1 | 0.00 - 0.10 |
| A2 | 0.90 - 1.05 |
| b | 0.30 - 0.50 |
| c | 0.08 - 0.15 |
| D | 2.80 - 3.00 |
| E | 1.20 - 1.40 |
| E1 | 2.25 - 2.55 |
| e | 0.95 REF. |
| e1 | 1.80 - 2.00 |
| L | 0.55 REF. |
| L1 | 0.30 - 0.50 |
| 0 - 8 |
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