Power Electronics MOSFET Siliup SP95N65CTO Silicon Carbide 650V High Blocking Voltage

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Product Description

Product Overview

The SP95N65CTO is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for easy paralleling and simple driving, making it suitable for a wide range of power electronics applications. The SP95N65CTO is RoHS compliant.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Material: Silicon Carbide (SiC)
Compliance: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS				650	V
On-Resistance (Typical)	RDS(on)TYP	@10V		25		m
Continuous Drain Current	ID				95	A
Features
High Speed Switching with Low Capacitances, High Blocking Voltage with Low RDS(on), Easy to Parallel, Simple to Drive, RoHS Compliant
Applications
Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverter, UPS Power Supply, Motor Drive, High Voltage DC/DC Converter
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				650	V
Gate-Source Voltage	VGSMAX		-10		+22	V
Recommended Gate-Source Voltage	VGSop		-5		+18	V
Continuous Drain Current (Tc=25)	ID				135	A
Continuous Drain Current (Tc=100)	ID				95	A
Pulsed Drain Current	IDM				280	A
Total Power Dissipation (Tc=25)	PD				720	W
Total Power Dissipation (Tc=100)	PD				352	W
Thermal Resistance Junction-Case	RJC			0.21		/W
Storage Temperature Range	TSTG		-55		175
Operating Junction Temperature Range	TJ		-55		175
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=100uA	650	-	-	V
Drain-Source Leakage Current	IDSS	VDS=650V, VGS=0V, TJ=25	-	3	100	uA
Gate-Source Leakage Current	IGSS	VGS=-5V~+20V, VDS=0V, TJ=25	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID=12mA, Tj=25	2.0	2.8	4.0	V
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID=12mA, Tj=175	-	2.0	-	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=18V, ID=40A, Tj=25	-	25	32	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=18V, ID=40A, Tj=175	-	38	-	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=15V, ID=40A, Tj=25	-	35	-	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=15V, ID=40A, Tj=175	-	42	-	m
Input Capacitance	Ciss	VDS=600V, VGS=0V, f=1MHz, VAC=25mV	-	3090	-	pF
Output Capacitance	Coss		-	251	-	pF
Reverse Transfer Capacitance	Crss		-	19	-	pF
Total Gate Charge	Qg	VDS=400V, VGS= -3/+18V, ID=40A	-	125	-	nC
Gate-Source Charge	Qgs		-	36	-	nC
Gate-Drain Charge	Qgd		-	38	-	nC
Turn-On Delay Time	Td(on)	VDS=400V, VGS= 3.5/+18V, ID=40A, RG=3.3	-	4.4	-	ns
Rise Time	Tr		-	21.3	-	ns
Turn-Off Delay Time	Td(off)		-	20.6	-	ns
Fall Time	Tf		-	9.7	-	ns
Turn-On Energy	Eon		-	30	-	J
Turn-Off Energy	Eoff		-	71	-	J
Total Switching Loss	Etot		-	101	-	J
Diode Forward Voltage	VSD	VGS= -5V, ISD=20A, TJ=25	-	3.7	-	V
Diode Forward Voltage	VSD	VGS= -5V, ISD=20A, TJ=175	-	3.5	-	V
Diode forward current	IS	VGS= -2V, TJ=25	-	-	133	A
Diode forward current	IS	VGS= -2V, TJ=175	-	-	90	A
Reverse Recovery Time	trr	VGS=-3.5V/+18V, ISD=40A, VR=400V, di/dt=3000A/s	-	16	-	ns
Reverse Recovery Charge	Qrr		-	125	-	nC
Peak Reverse Recovery Current	Irrm		-	28	-	A
Package Information
Package Type					TOLL
Marking					SP95N65CTO
Order Information	Device	Package	Unit/Tape
	SP95N65CTO	TOLL	2000
	SP90N65CTO

Package Dimensions (TO-247-3L):

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.850	5.150	0.191	0.200
A1	2.200	2.600	0.087	0.102
b	1.000	1.400	0.039	0.055
b1	2.800	3.200	0.110	0.126
b2	1.800	2.200	0.071	0.087
c	0.500	0.700	0.020	0.028
c1	1.900	2.100	0.075	0.083
D	15.450	15.750	0.608	0.620
E1	3.500 REF.	0.138 REF.
E2	3.600 REF.	0.142 REF.
L	40.900	41.300	1.610	1.626
L1	24.800	25.100	0.976	0.988
L2	20.300	20.600	0.799	0.811
	7.100	7.300	0.280	0.287
e	5.450 TYP.	0.215 TYP.
H	5.980 REF.	0.235 REF.
h	0.000	0.300	0.000	0.012