Low RDSon N Channel MOSFET Siliup SP40N12P8 Designed for Power Switching and Hard Switched Circuits
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Product Description
Product Overview
The SP40N12P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), with typical RDS(on) values of 12m at 10V and 16m at 4.5V. This device is designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. It is 100% tested for single-pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N12P8
- Technology: N-Channel MOSFET
- Package: SOP-8L
- Device Code: 40N12
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on) | @10V | 12 | m | |||
| RDS(on) | @4.5V | 16 | m | |||
| ID | 10 | A | ||||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| Power Switching Application | ||||||
| Hard switched and high frequency circuits | ||||||
| Uninterruptible Power Supply | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 10 | A | |||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single pulsed avalanche energy1 | EAS | 60 | mJ | |||
| Power Dissipation | PD | 2 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 12 | 15 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=4A | - | 16 | 22 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | - | 109 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qgd | - | 5.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 5.5 | - | nS |
| Rise Time | Tr | - | 14 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 12 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Reverse Recovery Time | Trr | IS=5A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 5 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 | REF. | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1 The EAS Test condition is VDD=20V, VGS =10V, L = 1mH, Rg=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N12P8 | SOP-8L | 4000 |
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