High Current 180A MOSFET Siliup SP10HF25TO 250V with Low Gate Charge and Avalanche Energy Testing
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP10HF25TO is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications requiring high efficiency and performance, including PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP10HF25TO
- Package: TOLL
- Device Code: SP10HF25TO
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 250 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 10 | m | ||
| ID | ID | 180 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 250 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 180 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 120 | A | ||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy | EAS | 1406 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 500 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V , ID=250uA | 250 | 285 | V | |
| Drain-Source Leakage Current | IDSS | VDS=200V , VGS=0V , TJ=25 | 10 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=40A | 10 | 12.5 | m | |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 5130 | pF | ||
| Output Capacitance | Coss | 351 | pF | |||
| Reverse Transfer Capacitance | Crss | 21 | pF | |||
| Total Gate Charge | Qg | VDS=200V , VGS=0-10V , ID=40A | 85 | nC | ||
| Gate-Source Charge | Qgs | 28 | ||||
| Gate-Drain Charge | Qg d | 22 | ||||
| Turn-On Delay Time | Td(on) | VDD=200V, VGS=10V , RG=1.6, ID=40A | 33 | nS | ||
| Rise Time | Tr | 15 | ||||
| Turn-Off Delay Time | Td(off) | 75 | nS | |||
| Fall Time | Tf | 8 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 180 | A | |||
| Reverse recover time | Trr | IS=40A, di/dt=100A/us, Tj=25 | 119 | nS | ||
| Reverse recovery charge | Qrr | 0.55 | uC | |||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP10HF25TO | TOLL | 2000 | ||||
| TOLL Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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