60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching
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Product Description
Product Overview
The SP60N08GP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), achieved through advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The device is available in a SOP-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N08GP8
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 7.5 | 10 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 10 | 13 | m | |
| ID | ID | 15 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25 unless otherwise noted) | 15 | A | ||
| Continuous Drain Current | ID | (Ta=100C) | 10 | A | ||
| Pulse Drain Current | IDM | Tested | 60 | A | ||
| Single Pulse Avalanche Energy | EAS | 91 | mJ | |||
| Power Dissipation | PD | 81 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 1.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 60 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 48V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.5 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 7.5 | 10 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 10 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =30V, VGS = 0V, f = 1.0MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | ||
| Reverse Transfer Capacitance | Crss | - | 25 | - | ||
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=20A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | ||
| Gate-Drain Charge | Qg d | - | 6.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS =10V,VDS =30V, ID=20A RG = 4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | ||
| Turn-Off Delay Time | td(off) | - | 33.8 | - | ||
| Fall Time | tf | - | 26.4 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 15 | A | |
| Reverse Recovery Time | Trr | IS=30A, di/dt=100A/us, TJ=25 | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
| Package Information | ||||||
| Device Code | 60N08G | |||||
| Package | SOP-8L | |||||
| Order Information | SP60N08GP8 | |||||
| Unit/Tape | 4000 | |||||
| SOP-8L Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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