Power MOSFET N Channel 120V Siliup SP012N07GHNK with Low Rdson and Single Pulse Avalanche Energy Tested
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Product Description
Product Overview
The SP012N07GHNK is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low Rdson. It is ideal for power switching applications, battery management systems, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N07GHNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 120 | V | ||||
| RDS(on)TYP | @10V | 7 | m | |||
| ID | 80 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 120 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 80 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 55 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 105 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.19 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 A | 120 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=120 V, VGS=0 V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20 V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=30 A | - | 7 | 9 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =60V, VGS = 0V, f = 1.0MHz | - | 4356 | - | pF |
| Output Capacitance | Coss | - | 268 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 18 | - | pF | |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=30A | - | 83 | - | nC |
| Gate-Source Charge | Qgs | - | 26 | - | ||
| Gate-Drain Charge | Qg d | - | 6.1 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 20V, VDS =60V, ID=30A RG = 4.7 | - | 18 | - | nS |
| Rise Time | tr | - | 46 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Fall Time | tf | - | 27 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 89 | - | nS |
| Reverse Recovery Charge | Qrr | - | 208 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
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