Low RDSon 100V N Channel Power MOSFET Siliup SP010N01AGHTO Designed for Hard Switched and PWM Power Circuits
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010N01AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01AGHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @10V | 0.95 | m | ||
| Continuous Drain Current | ID | 430 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 430 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 290 | A | ||
| Pulsed Drain Current | IDM | 1720 | A | |||
| Single Pulse Avalanche Energy | EAS | 2601 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 465 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.27 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | 110 | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=50A | - | 0.95 | 1.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 12142 | - | pF |
| Output Capacitance | Coss | - | 5288 | - | ||
| Reverse Transfer Capacitance | Crss | - | 353 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 218 | - | nC |
| Gate-Source Charge | Qgs | - | 66 | - | ||
| Gate-Drain Charge | Qgd | - | 57 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 43 | - | nS |
| Rise Time | tr | - | 71 | - | ||
| Turn-Off Delay Time | td(off) | - | 149 | - | ||
| Fall Time | tf | - | 89 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 430 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 136 | - | nS |
| Reverse Recovery Charge | Qrr | - | 380 | - | nC | |
| TOLL Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Dimensions | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
Get in Touch
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
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Contact Person
Sellina