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Low RDSon 100V N Channel Power MOSFET Siliup SP010N01AGHTO Designed for Hard Switched and PWM Power Circuits

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP010N01AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N01AGHTO
  • Technology: Advanced Split Gate Trench Technology
  • Package: TOLL

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
Drain-Source ON Resistance RDS(on)TYP @10V 0.95 m
Continuous Drain Current ID 430 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25) 430 A
Continuous Drain Current ID (Tc=100) 290 A
Pulsed Drain Current IDM 1720 A
Single Pulse Avalanche Energy EAS 2601 mJ
Power Dissipation PD (Tc=25) 465 W
Thermal Resistance Junction-to-Case RJC 0.27 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 110 - V
Drain Cut-Off Current IDSS VDS=80V , VGS=0V , TJ=25 - - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=50A - 0.95 1.2 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 12142 - pF
Output Capacitance Coss - 5288 -
Reverse Transfer Capacitance Crss - 353 -
Total Gate Charge Qg VDS=50V , VGS=10V , ID=125A - 218 - nC
Gate-Source Charge Qgs - 66 -
Gate-Drain Charge Qgd - 57 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=50V, VGS=10V , RG=1.6, ID=125A - 43 - nS
Rise Time tr - 71 -
Turn-Off Delay Time td(off) - 149 -
Fall Time tf - 89 -
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 430 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 136 - nS
Reverse Recovery Charge Qrr - 380 - nC
TOLL Package Information (Dimensions in Millimeters)
Symbol Dimensions Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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