Surface Mount SOT 23 Package P Channel MOSFET Siliup SP2301T2 with Low On Resistance and High Current
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP2301T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. This device offers a continuous drain current of -3A and features low on-resistance ratings at specified gate-source voltages.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2301T2
- Package Type: SOT-23
- Circuit Diagram Marking: 2301
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @-4.5V | 60 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @-2.5V | 80 | m | ||
| Continuous Drain Current | ID | -3 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -3 | A | |||
| Pulse Drain Current | IDM | Tested | -12 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-2A | 60 | 75 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-2A | 80 | 110 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-8V , VGS=0V , f=1MHz | 545 | pF | ||
| Output Capacitance | Coss | 136 | pF | |||
| Reverse Transfer Capacitance | Crss | 78 | pF | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-3A | 3.5 | nC | ||
| Gate-Source Charge | Qgs | 0.8 | ||||
| Gate-Drain Charge | Qg d | 1.5 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=6.2 , ID=-1A | 6.6 | nS | ||
| Turn-On Rise Time | tr | 18 | ||||
| Turn-Off Delay Time | td(off) | 24 | ||||
| Turn-Off Fall Time | tf | 16 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| SOT-23 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
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