20V N Channel MOSFET Siliup SP2002KT5 with Low RDSon and High Current Handling Capability

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Product Description

Product Overview

The SP2002KT5 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection (2KV) and is suitable for applications such as battery switches and DC/DC converters. It offers a low RDS(on) at various gate-source voltages.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: N-Channel MOSFET
Package: SOT-523
ESD Protected: 2KV

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			20		V
RDS(on)		@4.5V		250		m
		@2.5V		350		m
Continuous Drain Current	ID				0.75	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				20	V
Gate-Source Voltage	VGSS				12	V
Continuous Drain Current	ID				0.75	A
Pulse Drain Current	IDM	Tested			3	A
Power Dissipation	PD				150	mW
Thermal Resistance Junction-to-Ambient	RJA				833	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.30	0.65	1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=500mA	-	250	380	m
		VGS=2.5V , ID=200mA	-	350	450	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	-	35	-	pF
Output Capacitance	Coss		-	19	-
Reverse Transfer Capacitance	Crss		-	9	-
Total Gate Charge	Qg	VDS=10V , VGS=4.5V , ID=500mA	-	0.8	-	nC
Gate-Source Charge	Qgs		-	0.3	-
Gate-Drain Charge	Qg d		-	0.16	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=10V VGS=4.5V , RG=10 , ID=500mA	-	4	-	nS
Turn-On Rise Time	tr		-	19	-
Turn-Off Delay Time	td(off)		-	10	-
Turn-Off Fall Time	tf		-	21	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-523)
Symbol	Dimensions In Millimeters	Min	Max
A		0.700	0.900
A1		0.000	0.100
A2		0.700	0.800
b1		0.150	0.250
b2		0.250	0.350
C		0.100	0.200
D		1.500	1.700
E		0.700	0.900
E1		1.450	1.750
e		0.500 TYP
e1		0.900	1.100
L		0.400 REF
L1		0.260	0.460
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