Power MOSFET Shenzhen ruichips Semicon RU40191S-R N Channel 40V 190A for switching and power control
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Product Description
Product Overview
The RU40191S is an N-Channel Advanced Power MOSFET featuring a Super High Dense Cell Design for ultra-low on-resistance. It offers a 40V/190A rating with a typical RDS(ON) of 1.8m at VGS=10V. This device is 100% avalanche tested and is available in Lead Free and Green Devices (RoHS Compliant). It is suitable for DC-DC Converters, Off-line UPS, and other switching applications.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Condition | Rating | Unit | |
| Common Ratings (TC=25C Unless Otherwise Noted) | |||||
| VDSS | Drain-Source Voltage | 40 | V | ||
| VGSS | Gate-Source Voltage | ±20 | V | ||
| TJ | Maximum Junction Temperature | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 to 175 | °C | ||
| IS | Diode Continuous Forward Current | TC=25°C | 190 | A | |
| IDP | Pulse Drain Current | Ø 300µs Pulse | 760 | A | |
| ID | Continuous Drain Current | VGS=10V, TC=25°C | 190 | A | |
| ID | Continuous Drain Current | VGS=10V, TC=100°C | 146 | A | |
| PD | Maximum Power Dissipation | TC=25°C | 300 | W | |
| PD | Maximum Power Dissipation | TC=100°C | 150 | W | |
| RθJC | Thermal Resistance-Junction to Case | 0.5 | °C/W | ||
| RθJA | Thermal Resistance-Junction to Ambient | 62.5 | °C/W | ||
| EAS | Avalanche Energy, Single Pulsed | Ø | 812 | mJ | |
| Electrical Characteristics (TC=25°C Unless Otherwise Noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 40 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V | 1 | µA | |
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V, TJ=125°C | 30 | µA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2 | 4 | V |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=75A | 1.8 | 3 | mΩ |
| Diode Characteristics | |||||
| VSD | Diode Forward Voltage | ISD=75A, VGS=0V | 1.3 | V | |
| trr | Reverse Recovery Time | ISD=75A, dISD/dt=100A/µs | 40 | ns | |
| Qrr | Reverse Recovery Charge | 52 | nC | ||
| Dynamic Characteristics | |||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.2 | Ω | |
| Ciss | Input Capacitance | VGS=0V, VDS=20V, Frequency=1.0MHz | 4800 | pF | |
| Coss | Output Capacitance | 950 | pF | ||
| Crss | Reverse Transfer Capacitance | ||||
| td(ON) | Turn-on Delay Time | VDD=20V,IDS=75A, VGEN=10V,RG=2.5Ω | 19 | ns | |
| tr | Turn-on Rise Time | 96 | ns | ||
| td(OFF) | Turn-off Delay Time | 70 | ns | ||
| tf | Turn-off Fall Time | 50 | ns | ||
| Gate Charge Characteristics | |||||
| Qg | Total Gate Charge | VDS=32V, VGS=10V, IDS=75A | 120 | nC | |
| Qgs | Gate-Source Charge | 34 | nC | ||
| Qgd | Gate-Drain Charge | 46 | nC | ||
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