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China Power MOSFET Siliup SP60N01BGHNK 60V N Channel with 1.6m Typical RDSon and 120A Drain Current Rating for sale

Power MOSFET Siliup SP60N01BGHNK 60V N Channel with 1.6m Typical RDSon and 120A Drain Current Rating

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP60N01BGHNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters, with a typical RDS(on) of 1.6m at 10V and a continuous drain current of 120A (package limit at 25C). It is available in a PDFN5X6-8L package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP60N01BGHNK
  • Package: PDFN5X6-8L
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 60 V
RDS(on)TYP @10V 1.6 m
ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID Silicon Limit 180 A
Continuous Drain Current (Tc=25C) ID Package Limit 120 A
Continuous Drain Current (Tc=100C) ID 80 A
Pulse Drain Current Tested IDM 480 A
Single pulsed avalanche energy1 EAS 676 mJ
Power Dissipation (Tc=25C) PD 124 W
Thermal Resistance Junction-to-Case RJC 1.0 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =50A - 1.6 2.1 m
Dynamic Characteristics
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz - 6970 - pF
Output Capacitance Coss - 1398 - pF
Reverse Transfer Capacitance Crss - 58 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=50A - 104.8 - nC
Gate-Source Charge Qgs - 38.8 -
Gate-Drain Charge Qgd - 14.4 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=30 VGS=10V , RG=2.7, ID=50A - 25 - nS
Rise Time tr - 63.9 -
Turn-Off Delay Time td(off) - 62.4 -
Fall Time tf - 28.2 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=50A , TJ=25 - - 1.4 V
Diode Continuous Current IS - - 120 A
Reverse recover time trr IS=20A, di/dt=100A/us, Tj=25 - 73 - nS
Reverse recovery charge Qrr - 113.9 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

Note: 1. The EAS Test condition is VDD=30V, VGS =10V, L = 0.5mH, Rg=25


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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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