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40V P Channel Power MOSFET Siliup SP40P04AGHNK Featuring Split Gate Trench Technology Low Gate Charge and Fast Switching

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Product Description

Product Overview

The SP40P04AGHNK is a 40V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management scenarios. It comes in a PDFN5x6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40P04AGHNK
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN56-8L
  • Device Code: 40P04AGH

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS -40 V
RDS(on)TYP @-10V 3.7 m
ID -120 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID -120 A
Continuous Drain Current (Tc=100) ID -80 A
Pulsed Drain Current IDM -480 A
Single Pulse Avalanche Energy1 EAS 950 mJ
Power Dissipation (Tc=25) PD 150 W
Thermal Resistance Junction-to-Case RJC 0.83 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BV DSS VGS=0V , ID= -250uA -40 V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID = -250uA -2 -3 -4 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID= -20A 3.7 4.7 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz 6550 pF
Output Capacitance Coss 1686 pF
Reverse Transfer Capacitance Crss 39 pF
Total Gate Charge Qg VDS=-20V , VGS=10V , ID=-85A 90 nC
Gate-Source Charge Qgs 18
Gate-Drain Charge Qgd 12
Switching Characteristics
Turn-On Delay Time td(on) VDD=-20V , VGS=10V , RG=1.6,ID=-85A 30 nS
Rise Time tr 45
Turn-Off Delay Time td(off) 116
Fall Time tf 39
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -120 A
Reverse Recovery Time trr IS=-20A, di/dt=100A/us, TJ=25 55 nS
Reverse Recovery Charge Qrr 96 nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

Note: 1. The test condition is VDD=-20V, VGS=-10V, L=0.5mH, RG=25

Order Information:

Device Package Unit/Tape
SP40P04AGHNK PDFN5X6-8L 5000

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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