40V N Channel Power MOSFET Siliup SP40N02AGNK with Split Gate Trench Technology and Low Gate Charge
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Product Description
Product Overview
The SP40N02AGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications and DC-DC converters. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02AGNK
- Device Code: 40N02AG
- Technology: Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 1.5 | 1.9 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 2.4 | 3.2 | m | |
| ID | ID | (Tc=25, Silicon Limit) | 170 | A | ||
| ID | ID | (Tc=25, Package Limit) | 120 | A | ||
| ID | ID | (Tc=100) | 80 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Pulsed Drain Current | IDM | 480 | A | |||
| Single Pulse Avalanche Energy | EAS | 600 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 110 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Drain Cut-Off Current | IDSS | VDS=32V, VGS=0V, TJ=25 | 1 | uA | ||
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=20A | 1.5 | 1.9 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V, ID=10A | 2.4 | 3.2 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | 3485 | pF | ||
| Output Capacitance | Coss | 1208 | pF | |||
| Reverse Transfer Capacitance | Crss | 59 | pF | |||
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=85A | 57 | nC | ||
| Gate-Source Charge | Qgs | 9.5 | ||||
| Gate-Drain Charge | Qg d | 11 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | 10 | nS | ||
| Rise Time | tr | 3 | ||||
| Turn-Off Delay Time | td(off) | 35 | ||||
| Fall Time | tf | 4 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 120 | A | |||
| Reverse Recovery Time | Trr | IS=40A, di/dt=100A/us, TJ=25 | 42 | nS | ||
| Reverse Recovery Charge | Qrr | 37 | nC | |||
| PDFN5X6-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. 0.050TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
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