Low RDSon 150V P Channel MOSFET Siliup SP015P45GTQ Suitable for Power Management and DC DC Converter Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP015P45GTQ is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015P45GTQ
- Package Type: TO-220-3L
- Material: Silicon (implied by Siliup Semiconductor)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -150 | V | ||||
| RDS(on) | -10V | 45 | m | |||
| RDS(on) | -4.5V | 47 | m | |||
| ID | -65 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | -150 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | -65 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -45 | A | ||
| Pulsed Drain Current | IDM | -260 | A | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 296 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -150 | V | ||
| Drain Cut-Off Current | IDSS | VDS= -120V , VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1 | -1.9 | -2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS= -10V , ID= -30A | 45 | 58 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS= -4.5V , ID= -20A | 47 | 60 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS= -75V,VGS=0V,f=1MHZ | 6550 | pF | ||
| Output Capacitance | Coss | 275 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Total Gate Charge | Qg | VDS= -75V , VGS= -10V , ID= -15A | 172 | nC | ||
| Gate-Source Charge | Qgs | 18 | ||||
| Gate-Drain Charge | Qg d | 38 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD= -75V, VGS=-10V , RG=1.6, ID= -15A | 68 | nS | ||
| Rise Time | tr | 18 | ||||
| Turn-Off Delay Time | td(off) | 70 | ||||
| Fall Time | tf | 35 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -65 | A | |||
| Reverse Recovery Time | Trr | IS= -15A, di/dt=100A/us, TJ=25 | 350 | nS | ||
| Reverse Recovery Charge | Qrr | 86 | nC | |||
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
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