Low Gate Charge 150V N Channel MOSFET Siliup SP015N16GHNK Designed for Power Switching and DC DC Converter
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP015N16GHNK is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N16GHNK
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 40 | A | |||
| Continuous Drain Current (Tc=100) | ID | 25 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulse Avalanche Energy | EAS | 240 | mJ | |||
| Power Dissipation (Tc=25) | PD | 105 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.19 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 1869 | - | pF |
| Output Capacitance | Coss | - | 153 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 25 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | ||
| Gate-Drain Charge | Qgd | - | 4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 20A, RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | 5 | - | ||
| Turn-Off Delay Time | td(off) | - | 21 | - | ||
| Fall Time | tf | - | 5 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 40 | A | |
| Body Diode Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 70 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 156 | - | nC | |
| PDFN5X6-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
| Order Information | Package | Unit/Tape |
|---|---|---|
| SP015N16GHNK | PDFN5X6-8L | 5000 |
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