Dual N Channel MOSFET Shenzhen ruichips Semicon RU30J30M 30V 30A with fast switching speed and low RDS
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Product Description
Product Overview
The RU30J30M is a Dual N-Channel Advanced Power MOSFET designed for switching applications and DC/DC converters. It features a 30V/30A rating with low RDS(ON) of 7m (Typ.) at VGS=10V and 9.5m (Typ.) at VGS=4.5V. Key advantages include fast switching speed, low gate charge, and 100% avalanche tested. Lead-free and green devices are available (RoHS Compliant).
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: Shenzhen City, China
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | RU30J30M | Unit | ||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | ||||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -55 to 150 | °C | |||
| ID | Continuous Drain Current@TC(VGS=4.5V) | TC=25°C | 30 | A | ||
| ID | Continuous Drain Current@TC(VGS=4.5V) | TC=100°C | 19 | A | ||
| ID | Continuous Drain Current@TA(VGS=4.5V) | TA=25°C | 10 | A | ||
| ID | Continuous Drain Current@TA(VGS=4.5V) | TA=70°C | 8 | A | ||
| IDP | 300µs Pulse Drain Current | TC=25°C | 120 | A | ||
| PD | Maximum Power Dissipation@TC | TC=25°C | 29 | W | ||
| PD | Maximum Power Dissipation@TC | TC=100°C | 12 | W | ||
| PD | Maximum Power Dissipation@TA | TA=25°C | 3.1 | W | ||
| PD | Maximum Power Dissipation@TA | TA=70°C | 2 | W | ||
| IS | Diode Continuous Forward Current | TC=25°C | 20 | A | ||
| Electrical Characteristics (TC=25°C Unless Otherwise Noted) | ||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 30 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 1.2 | 2.5 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 300 | µA | ||
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | 7 | 9 | mΩ | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=16A | 9.5 | 12 | mΩ | |
| VSD | Diode Forward Voltage | ISD=20A, VGS=0V | 1.2 | V | ||
| trr | Reverse Recovery Time | ISD=20A, dlSD/dt=100A/µs | 15 | ns | ||
| Qrr | Reverse Recovery Charge | ISD=20A, dlSD/dt=100A/µs | 8 | nC | ||
| Dynamic Characteristics | ||||||
| Symbol | Parameter | Test Condition | Typ. | Unit | ||
| Ciss | Input Capacitance | VDS=24V, VGS=10V, IDS=20A, F=1.0MHz | 670 | pF | ||
| Coss | Output Capacitance | VDS=24V, VGS=10V, IDS=20A, F=1.0MHz | 180 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=24V, VGS=10V, IDS=20A, F=1.0MHz | 75 | pF | ||
| td(ON) | Turn-on Delay Time | VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω | 5 | ns | ||
| tr | Turn-on Rise Time | VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω | 10 | ns | ||
| td(OFF) | Turn-off Delay Time | VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω | 15 | ns | ||
| tf | Turn-off Fall Time | VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω | 4 | ns | ||
| Qg | Total Gate Charge | VDS=24V, IDS=20A | 12 | nC | ||
| Qgs | Gate-Source Charge | VDS=24V, IDS=20A | 3 | nC | ||
| Qgd | Gate-Drain Charge | VDS=24V, IDS=20A | 4 | nC | ||
| Thermal Resistance | ||||||
| RθJC | Thermal Resistance-Junction to Case | 4.2 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | 40 | °C/W | |||
| Avalanche Ratings | ||||||
| EAS | Avalanche Energy, Single Pulsed | 49 | mJ | |||
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