ROHS compliant Siliup SP1011CNK 100V complementary MOSFET with fast switching speeds and performance

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP1011CNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This device is ROHS compliant and halogen-free, undergoing 100% single pulse avalanche energy testing. It is ideal for applications such as DC-DC converters and motor control.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Compliance: ROHS Compliant & Halogen-Free
Testing: 100% Single Pulse avalanche energy Test
Package: PDFN5X6-8L

Technical Specifications

SP1011CNK 100V Complementary MOSFET
Parameter	Symbol	N-Channel Rating	P-Channel Rating
Product Summary
V(BR)DSS		100V	-100V
RDS(on)TYP		80m@10V, 85m@4.5V	85m@-10V, 95m@-4.5V
ID		10A	-15A
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS	100V	-100V
Gate-Source Voltage	VGS	20V	20V
Continuous Drain Current (Tc=25C)	ID	10A	-15A
Pulse Drain Current Tested	IDM	40A	-60A
Single pulsed avalanche energy	EAS	25 mJ	156 mJ
Power Dissipation (Tc=25C)	PD	45W
Thermal Resistance Junction-to-Case	RJC	2.8 C/W
Storage Temperature Range	TSTG	-55 to 150 C
Operating Junction Temperature Range	TJ	-55 to 150 C
N-Channel Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	100V (VGS=0V, ID=250uA)
Drain-Source Leakage Current	IDSS	1 uA (VDS=80V, VGS=0V)
Gate-Source Leakage Current	IGSS	100 nA (VGS=20V, VDS=0V)
Gate Threshold Voltage	VGS(th)	1.0 - 2.5V (VGS=VDS, ID=250uA)
Static Drain-Source On-Resistance	RDS(ON)	80 - 100 m (VGS=10V, ID=8A)
		85 - 115 m (VGS=4.5V, ID=6A)
Input Capacitance	Ciss	951 pF (VDS=50V, VGS=0V, f=1MHz)
Output Capacitance	Coss	32.3 pF
Reverse Transfer Capacitance	Crss	27.3 pF
Total Gate Charge	Qg	20.2 nC (VDS=50V, VGS=10V, ID=6A)
Gate-Source Charge	Qgs	2.1 nC
Gate-Drain Charge	Qgd	4.2 nC
Turn-On Delay Time	Td(on)	6.6 nS (VDD=50V, VGS=10V, RG=3, ID=6A)
Rise Time	Tr	46 nS
Turn-Off Delay Time	Td(off)	31 nS
Fall Time	Tf	4 nS
Diode Forward Voltage	VSD	1.2V (VGS=0V, IS=1A)
Maximum Body-Diode Continuous Current	IS	10A
Reverse recover time	Trr	31 nS (IS=6A, di/dt=100A/us)
Reverse recovery charge	Qrr	23 nC
P-Channel Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS		-100V (VGS=0V, ID=-250uA)
Drain-Source Leakage Current	IDSS		-1 uA (VDS=-80V, VGS=0V)
Gate-Source Leakage Current	IGSS		100 nA (VGS=20V, VDS=0V)
Gate Threshold Voltage	VGS(th)		-1.0 - -2.5V (VGS=VDS, ID=-250uA)
Static Drain-Source On-Resistance	RDS(ON)		-85 - 105 m (VGS=-10V, ID=-8A)
			-95 - 125 m (VGS=-4.5V, ID=-6A)
Input Capacitance	Ciss		3769 pF (VDS=-50V, VGS=0V, f=1MHz)
Output Capacitance	Coss		72.3 pF
Reverse Transfer Capacitance	Crss		66.4 pF
Total Gate Charge	Qg		72 nC (VDS=-50V, VGS=-10V, ID=-6A)
Gate-Source Charge	Qgs		8.4 nC
Gate-Drain Charge	Qgd		17.3 nC
Turn-On Delay Time	Td(on)		11.6 nS (VDD=-50V, VGS=-10V, RG=6, ID=-5A)
Rise Time	Tr		17.6 nS
Turn-Off Delay Time	Td(off)		115.2 nS
Fall Time	Tf		42 nS
Diode Forward Voltage	VSD		-1.2V (VGS=0V, IS=-1A)
Maximum Body-Diode Continuous Current	IS		-15A
Reverse recover time	Trr		79 nS (IS=-5A, di/dt=-100A/us)
Reverse recovery charge	Qrr		141 nC
Package Dimensions (PDFN5X6-8L)
Symbol	Dimensions In Millimeters		Dimensions In Inches
A	0.900 - 1.000		0.035 - 0.039
A3	0.254 REF.		0.010 REF.
D	4.944 - 5.096		0.195 - 0.201
E	5.974 - 6.126		0.235 - 0.241
D1	1.470 - 1.870		0.058 - 0.074
D2	0.470 - 0.870		0.019 - 0.034
E1	3.375 - 3.575		0.133 - 0.141
D3	4.824 - 4.976		0.190 - 0.196
E2	5.674 - 5.826		0.223 - 0.229
k	1.190 - 1.390		0.047 - 0.055
b	0.350 - 0.450		0.014 - 0.018
e	1.270 TYP.		0.050 TYP.
L	0.559 - 0.711		0.022 - 0.028
L1	0.424 - 0.576		0.017 - 0.023
H	0.574 - 0.726		0.023 - 0.029
	10 - 12		10 - 12