Power MOSFET Shenzhen ruichips Semicon RU40120M designed for fast switching and power conversion

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Product Description

Product Overview

The RU40120M is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance and fast switching speed. It is 100% avalanche tested and available in lead-free and green devices. This MOSFET is ideal for DC/DC converters and power supply applications.

Product Attributes

Brand: Ruichips Semiconductor Co., Ltd
Model: RU40120M
Package: PDFN5060
Certifications: Lead Free and Green Devices Available (RoHS Compliant)
Origin: CHINA

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, IDS=250A	40			V
Gate Threshold Voltage	VGS(th)	VDS=VGS, IDS=250A	2		4	V
Gate Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Drain-Source On-state Resistance	RDS(ON)	VGS=10V, IDS=60A		2.7	4.5	m
Diode Forward Voltage	VSD	ISD=60A, VGS=0V		1.2		V
Reverse Recovery Time	trr	ISD=60A, dlSD/dt=100A/s		33		ns
Reverse Recovery Charge	Qrr	ISD=60A, dlSD/dt=100A/s		30		nC
Gate Resistance	RG	VGS=0V,VDS=0V,F=1MHz		1.8
Input Capacitance	Ciss	VDS=32V, VGS=10V, IDS=60A		3700		pF
Output Capacitance	Coss	VGS=0V, VDS=20V, Frequency=1.0MHz		680		pF
Reverse Transfer Capacitance	Crss	VGS=0V, VDS=20V, Frequency=1.0MHz		345		pF
Turn-on Delay Time	td(ON)	VDD=20V,IDS=60A, VGEN=10V,RG=4.7		36		ns
Turn-on Rise Time	tr	VDD=20V,IDS=60A, VGEN=10V,RG=4.7		205		ns
Turn-off Delay Time	td(OFF)	VDD=20V,IDS=60A, VGEN=10V,RG=4.7		85		ns
Turn-off Fall Time	tf	VDD=20V,IDS=60A, VGEN=10V,RG=4.7		45		ns
Total Gate Charge	Qg	VDS=32V, IDS=60A		90		nC
Gate-Source Charge	Qgs	VDS=32V, IDS=60A		32		nC
Gate-Drain Charge	Qgd	VDS=32V, IDS=60A		37		nC
Continuous Drain Current@TC	ID	VGS=10V, TC=25C		120		A
Continuous Drain Current@TC	ID	VGS=10V, TC=100C		75		A
Continuous Drain Current@TA	ID	VGS=10V, TA=25C		21		A
Continuous Drain Current@TA	ID	VGS=10V, TA=70C		17		A
Pulse Drain Current	IDP	VGS=10V, TC=25C		480		A
Diode Continuous Forward Current	IS	TC=25C		50		A
Drain-Source Avalanche Ratings	EAS	VGS=0V, IAS=40A, VDD = 32V, RG = 50, Starting TJ = 25C		400		mJ
Thermal Resistance-Junction to Case	RJC			1.3		C/W
Thermal Resistance-Junction to Ambient	RJA	Mounted on Large Heat Sink		30		C/W
Maximum Power Dissipation@TC	PD	TC=25C		96		W
Maximum Power Dissipation@TA	PD	TA=25C		4.2		W
Maximum Junction Temperature	TJ				150	C
Storage Temperature Range	TSTG		-55		150	C