Surface Mount P Channel MOSFET Siliup SP2004KT2 with 20V Drain Source Voltage and 2KV ESD Protection

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Product Description

Product Overview

The SP2004KT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters. The MOSFET is available in a SOT-23 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23
ESD Protection: 2KV

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-20	V
RDS(on)		@-4.5V		400		m
ID				-0.7		A
RDS(on)		@-2.5V		550		m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				-20	V
Gate-Source Voltage	VGSS				12	V
Continuous Drain Current	ID				-0.7	A
Pulse Drain Current	IDM	Tested			-2.8	A
Power Dissipation	PD				350	mW
Thermal Resistance Junction-to-Ambient	RJA				357	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20		-	V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.35	-0.65	-1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-500mA	-	400	550	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V , ID=-200mA	-	550	700	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-16V , VGS=0V , f=1MHz	-	113	-	pF
Output Capacitance	Coss		-	15	-	pF
Reverse Transfer Capacitance	Crss		-	9	-	pF
Total Gate Charge	Qg	VDS=-10V , VGS=-4.5V , ID=-300mA	-	1.9	-	nC
Gate-Source Charge	Qgs		-	0.4	-
Gate-Drain Charge	Qg		-	0.31	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA	-	9	-	nS
Turn-On Rise Time	tr		-	5.7	-
Turn-Off Delay Time	td(off)		-	32.6	-
Turn-Off Fall Time	tf		-	20.3	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Package Information (SOT-23 Dimensions in Millimeters)
Symbol	Min.	Max.
A	0.90	1.15
A1	0.00	0.10
A2	0.90	1.05
b	0.30	0.50
c	0.08	0.15
D	2.80	3.00
E	1.20	1.40
E1	2.25	2.55
e	0.95 REF.
e1	1.80	2.00
L	0.55 REF.
L1	0.30	0.50
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