N Channel 150V Power MOSFET with Split Gate Trench Technology and Low Gate Charge Siliup SP015N04BGHTO
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Delivery Time:
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Product Description
Product Overview
The SP015N04BGHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N04BGHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 4.3 | m | ||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 220 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 150 | A | ||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1296 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 420 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | 160 | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 4.3 | 5.5 | m |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 6620 | - | pF |
| Output Capacitance | Coss | - | 536 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 19 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 82 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | nC | |
| Gate-Drain Charge | Qg | d | - | 23 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 23 | - | nS |
| Rise Time | Tr | - | 39 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 49 | - | nS | |
| Fall Time | Tf | - | 18 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 162 | - | nS |
| Reverse Recovery Charge | Qrr | - | 526 | - | nC | |
| TOLL Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Min. | Nom. | Max. | |||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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