Low Gate Charge and RDSon 120V N Channel Power MOSFET Siliup SP012N03AGHTO for DC DC Power Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP012N03AGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for high-speed power switching applications, DC-DC converters, and power management systems. Its key advantages include low gate charge and RDS(on), low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N03AGHTO
- Channel Type: N-Channel
- Package: TOLL
- Origin: China (implied by .com domain and company name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 120 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 230 | A | |||
| Continuous Drain Current (Tc=100) | ID | 155 | A | |||
| Pulsed Drain Current | IDM | 920 | A | |||
| Single Pulse Avalanche Energy | EAS | 1296 | mJ | |||
| Power Dissipation (Tc=25) | PD | 320 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 120 | 125 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 96V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 2.8 | 3.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 11500 | - | pF |
| Output Capacitance | Coss | - | 1600 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 44 | - | pF | |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 198 | - | nC |
| Gate-Source Charge | Qgs | - | 48 | - | nC | |
| Gate-Drain Charge | Qgd | - | 48 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 60V, ID = 75A, RG = 1.6 | - | 21 | - | nS |
| Rise Time | tr | - | 23 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 79 | - | nS | |
| Fall Time | tf | - | 31 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 230 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 98 | - | nS |
| Reverse Recovery Charge | Qrr | - | 216 | - | nC | |
| Package Outline Dimensions (TOLL) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | BSC | 1.20 | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | BSC | 3.00 | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | REF | 0.08 | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP012N03AGHTO | TOLL | 2000 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina