SG1M160120J Silicon Carbide Power MOSFET 1200V 21A TO2637L Package with Low Reverse Recovery Charge
Product Overview
The SG1M160120J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage (15V for turn-on), and fully controllable dv/dt. This device boasts high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and requirements, improved efficiency, and increased power density, enabling higher system switching frequencies. The SG1M160120J is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Package: TO-263-7L
- Certifications: Halogen free, RoHS compliant
- Origin: Ningbo, China
Technical Specifications
| Model | VDS (V) | IDS (A) | RDS(ON) Typ (m) | Tj,max (C) | Package | Marking |
|---|---|---|---|---|---|---|
| SG1M160120J | 1200 | 21 (TC = 25) | 160 (VGS = 15 V, ID = 8.5 A, TJ = 25) | 175 | TO263-7L | SG1M160120J |
Key Performance and Ratings
| Parameter | Value | Unit | Test Conditions |
|---|---|---|---|
| Drain source voltage (VDS,max) | 1200 | V | VGS = 0V, ID = 100A |
| Gate source voltage (VGS,max) | -8 / +19 | V | Absolute maximum values |
| Gate source voltage (VGSop) | -4 / +15 | V | Recommended operational values |
| Continuous drain current (ID) | 21 | A | VGS = 15V, TC = 25C |
| Continuous drain current (ID) | 15 | A | VGS = 15V, TC = 100C |
| Pulsed drain current (ID(pulse)) | 42 | A | Pulse width tP limited by Tj,max |
| Power dissipation (PD) | 120 | W | TC= 25C, TJ = 175C |
| Operating Junction and storage temperature (TJ ,Tstg) | -55 to +175 | C | |
| Soldering temperature (TL) | 260 | C | 1.6mm (0.063) from case for 10s |
| Thermal resistance (Rth(j-c)) | 1.27 | C/W | Junction to case |
| Drain-source breakdown voltage (V(BR)DSS) | 1200 | V | VGS = 0V, ID = 100A |
| Gate threshold voltage (VGS(th)) | 2.3 - 3.6 | V | VDS = VGS, ID = 2.33mA |
| Zero gate voltage drain current (IDSS) | - 10 | A | VDS = 1200V, VGS = 0V |
| Gate source leakage current (IGSS) | - 100 | nA | VGS = 15V, VDS = 0V |
| Current drain-source on-state resistance (RDS(on)) | 160 - 200 | m | VGS = 15V, ID = 8.5A |
| Transconductance (gfs) | 6.2 | S | VDS = 20V, ID = 8.5A |
| Diode forward voltage (VSD) | 3.7 | V | VGS = -4V, ISD = 6A |
| Input capacitance (Ciss) | 617 | pF | VDS = 1000V, VGS = 0V, f = 100KHz |
| Output capacitance (Coss) | 31 | pF | VDS = 1000V, VGS = 0V, f = 100KHz |
| Reverse capacitance (Crss) | 1.4 | pF | VDS = 1000V, VGS = 0V, f = 100KHz |
| Stored energy (Eoss) | 17.4 | J | |
| Gate source charge (Qgs) | 8.4 | nC | VDS = 800V, VGS = -4/+15V, ID =8.5A |
| Gate drain charge (Qgd) | 10.2 | nC | VDS = 800V, VGS = -4/+15V, ID =8.5A |
| Gate charge (Qg) | 25.4 | nC | VDS = 800V, VGS = -4/+15V, ID =8.5A |
| Turn on switching energy (Eon) | 94 | J | VDS = 800V, VGS = -4/+15V, ID = 8.5A, Rg = 2.5, L = 120uH |
| Turn off switching energy (Eoff) | 12 | J | VDS = 800V, VGS = -4/+15V, ID = 8.5A, Rg = 2.5, L = 120uH |
| Turn on delay time (td(on)) | 13 | ns | |
| Rise time (tr) | 8 | ns | |
| Turn off delay time (td(off)) | 14 | ns | |
| Fall time (tf) | 11 | ns | |
| Body diode forward voltage (VSD) | 4.0 | V | VGS = -4V, ISD = 6A |
| Continuous diode forward current (IS) | 18 | A | VGS = -4V, Tc = 25C |
| Reverse recovery time (trr) | 11 | nS | VR = 800V, VGS = -4V, ID = 8.5A, di/dt = 1838A/S, TJ = 150C |
| Reverse recovery charge (Qrr) | 20 | nC | VR = 800V, VGS = -4V, ID = 8.5A, di/dt = 1838A/S, TJ = 150C |
| Peak reverse recovery current (Irrm) | 12 | A | VR = 800V, VGS = -4V, ID = 8.5A, di/dt = 1838A/S, TJ = 150C |
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