Low RDS on N Channel MOSFET Siliup SP011N02GHTO 110V Rated for High Frequency and Power Management Applications
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Product Description
Product Overview
The SP011N02GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N02GHTO
- Channel Type: N-Channel
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 110 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 260 | A | |
| Continuous Drain Current (Tc=100) | ID | 175 | A | |
| Pulsed Drain Current | IDM | 1040 | A | |
| Single Pulse Avalanche Energy | EAS | 1560 | mJ | VDD=50V,VGS=10V,L=0.5mH,RG=25 |
| Power Dissipation (Tc=25) | PD | 280 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.45 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 110 (Typ: 120) | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | A | VDS = 80V, VGS = 0V |
| Gate Leakage Current | IGSS | 0.1 | A | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 (Typ: 3.0, Max: 4) | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | 2 (Typ: 2.5) | m | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | 9625 (Typ) | pF | VDS =50V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 1608 (Typ) | pF | |
| Reverse Transfer Capacitance | Crss | 75 (Typ) | pF | |
| Total Gate Charge | Qg | 160 (Typ) | nC | VDS=50V , VGS=10V , ID=20A |
| Gate-Source Charge | Qgs | 31 (Typ) | nC | |
| Gate-Drain Charge | Qg d | 37 (Typ) | nC | |
| Turn-On Delay Time | td(on) | 35 (Typ) | nS | VGS = 10V, VDS = 50V, RL=2.5 RG = 6.0 |
| Rise Time | tr | 68 (Typ) | nS | |
| Turn-Off Delay Time | td(off) | 150 (Typ) | nS | |
| Fall Time | tf | 105 (Typ) | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 (Typ) | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 260 | A | |
| Reverse Recovery Time | Trr | 97 (Typ) | nS | TJ = 25C, IF = 100A di/dt = 100A/us |
| Reverse Recovery Charge | Qrr | 228 (Typ) | nC |
TOLL Package Dimensions (mm):
| Symbol | Min. | Nom. | Max. |
|---|---|---|---|
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | - | - |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 BSC | - | - |
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 BSC | - | - |
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 REF. | - | - |
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
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