switching MOSFET Siliup SP20N08TH 20V N Channel with low gate charge and avalanche energy testing
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Product Description
Product Overview
The SP20N08TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching and synchronous rectification applications. It offers fast switching speeds, low gate charge, and low RDS(on) at various gate voltages (8m @ 4.5V, 12m @ 2.5V). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters. It is supplied in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N08TH
- Device Code: 20N08
- Package: TO-252
- Channel Type: N-Channel
- Voltage Rating: 20V
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 20 | V |
| RDS(on)TYP | - | @4.5V | - | 8 | 11 | m |
| RDS(on)TYP | - | @2.5V | - | 12 | 16 | m |
| ID | - | - | - | - | 40 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 20 | V |
| Gate-Source Voltage | VGS | - | - | - | 12 | V |
| Continuous Drain Current (TC=25) | ID | - | - | - | 40 | A |
| Continuous Drain Current (TC=100) | ID | - | - | - | 26.7 | A |
| Pulsed Drain Current | IDM | - | - | - | 160 | A |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 81 | mJ |
| Power Dissipation (TC=25) | PD | - | - | - | 30 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 4.1 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 8 | 11 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=15A | - | 12 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 1196 | - | pF |
| Output Capacitance | Coss | - | - | 162 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 105 | - | pF |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=10V,VGS=10V,ID=20A | - | 15 | - | nC |
| Gate-Source Charge | Qgs | - | - | 1.8 | - | - |
| Gate-Drain Charge | Qgd | - | - | 2.8 | - | - |
| Turn-On Delay Time | Td(on) | VGS=4.5V,VDD=10V,ID=20A,RG=3 | - | 7 | - | nS |
| Rise Time | Tr | - | - | 19 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 31 | - | - |
| Fall Time | Tf | - | - | 10 | - | - |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 40 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 9 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 1.5 | - | nC |
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