100V P Channel Power MOSFET Siliup SP010P10GHTD with Split Gate Trench Technology and Low On Resistance
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Delivery Time:
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Product Description
Product Overview
The SP010P10GHTD is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for various applications including PWM applications, hard-switched and high-frequency circuits, and power management. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP010P10GHTD
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 10 | m | ||
| Continuous Drain Current | ID | -120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -120 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -80 | A | ||
| Pulsed Drain Current | IDM | -480 | A | |||
| Single Pulse Avalanche Energy | EAS | 820 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 232 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -2 | -3 | -4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | 10 | 13 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 13600 | pF | ||
| Output Capacitance | Coss | 1200 | pF | |||
| Reverse Transfer Capacitance | Crss | 26 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=10V , ID=-20A | 168 | nC | ||
| Gate-Source Charge | Qgs | 46 | nC | |||
| Gate-Drain Charge | Qgd | 23 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 16 | ns | ||
| Rise Time | tr | 58 | ns | |||
| Turn-Off Delay Time | td(off) | 145 | ns | |||
| Fall Time | tf | 56 | ns | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -120 | A | |||
| Reverse Recovery Time | trr | IS=-20A, di/dt=100A/us, TJ=25 | 96 | ns | ||
| Reverse Recovery Charge | Qrr | 205 | nC | |||
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 8 | 0 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||
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