Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics

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Product Description

Product Overview

The SP2004KT7J is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this P-Channel switch features low RDS(on) and operates at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is marked with 'KD' as its device code.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Package: SOT-723
Channel Type: P-Channel
Device Code: KD

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-20	V
RDS(on)		@ -4.5V		400		m
		@ -2.5V		550		m
Continuous Drain Current	ID				-0.7	A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS				-20	V
Gate-Source Voltage	VGS				10	V
Continuous Drain Current	ID				-0.7	A
Pulsed Drain Current	IDM				-2.8	A
Power Dissipation	PD				0.15	W
Thermal Resistance from Junction to Ambient	RJA				833	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55		+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250A	-20			V
Zero gate voltage drain current	IDSS	VDS =-20V,VGS = 0V			-1	A
Gate-body leakage current	IGSS	VGS = 10VVDS =0V			10	A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250A	-0.35	-0.65	-1	V
Drain-source on-resistance	RDS(on)	VGS = -4.5V, ID = -0.5A		400	520	m
		VGS = -2.5V, ID = -0.2A		550	700	m
		VGS = -1.8V, ID = -0.1A		800	1000	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS =-16V,VGS =0V,f =1MHz		113		pF
Output Capacitance	Coss			15		pF
Reverse Transfer Capacitance	Crss			9		pF
Turn-on delay time	td(on)	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		9		ns
Turn-on rise time	tr			5.7		ns
Turn-off delay time	td(off)			32.6		ns
Turn-off fall time	tf			20.3		ns
Source-Drain Diode Characteristics
Diode Forward voltage	VSD	VGS =0V, IS=-0.5 A		-1.2		V
Package Information (SOT-723)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.430	0.500
A1		0.000	0.050
b		0.170	0.270
b1		0.270	0.370
c		0.080	0.150
D		1.150	1.250
E		1.150	1.250
E1		0.750	0.850
e		0.800 (TYP.)
		7 (REF.)