Compact P Channel MOSFET Siliup SP30P30T1 with 30 Volt Drain Source Voltage and High Current Handling

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Product Description

Product Overview

The SP30P30T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical drain-source on-resistance of 30m at -10V gate-source voltage and -6A drain current, and 45m at -4.5V gate-source voltage and -5A drain current.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23-3L
Device Code: 30P30

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
RDS(on)		-10V		30	m
RDS(on)		-4.5V		45	m
Continuous Drain Current	ID				-5	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				-30	V
Gate-Source Voltage	VGSS			20	V
Continuous Drain Current	ID				-5	A
Pulse Drain Current	IDM	Tested			-20	A
Power Dissipation	PD				1.3	W
Thermal Resistance Junction-to-Ambient	RJA				96	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1.0	-1.6	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-6A		30	42	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-5A		45	72	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		850		pF
Output Capacitance	Coss			116		pF
Reverse Transfer Capacitance	Crss			112		pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-6.5A		13		nC
Gate-Source Charge	Qgs			2.6
Gate-Drain Charge	Qg d			2.2
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-15V VGS=-10V , RG=3 , ID=-4A		7.5		nS
Turn-On Rise Time	tr			5.5
Turn-Off Delay Time	td(off)			19
Turn-Off Fall Time	tf			7
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-23-3L)
Symbol	Dimensions in millimeters	Min.	Max.
A		1.050	1.250
A1		0.000	0.100
A2		1.050	1.150
b		0.300	0.500
c		0.100	0.200
D		2.820	3.020
E		1.500	1.700
E1		2.650	2.950
e		0.950 (Typ.)
e1		1.800	2.000
L		0.300	0.600
		0	8