Compact Surface Mount 30V N Channel MOSFET Siliup SP30N04NK with ROHS Compliance and Low On Resistance
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Product Description
Product Overview
The SP30N04NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, this ROHS Compliant & Halogen-Free component offers fast switching speeds and is 100% tested for single pulse avalanche energy. It is ideal for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30N04NK
- Channel Type: N-Channel
- Voltage Rating: 30V
- Package: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 3.8 | m | ||
| On-Resistance | RDS(on)TYP | @4.5V | 6.5 | m | ||
| Continuous Drain Current | ID | 70 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 70 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 49 | A | ||
| Pulse Drain Current | IDM | Tested | 280 | A | ||
| Single pulsed avalanche energy | EAS | 110 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 3.8 | 4.8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =20A | - | 6.5 | 9 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1788 | - | pF |
| Output Capacitance | Coss | - | 225 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=30A | - | 32.8 | - | nC |
| Gate-Source Charge | Qgs | - | 6.3 | - | ||
| Gate-Drain Charge | Qgd | - | 7.8 | - | ||
| Turn-On Delay Time | Td(on) | VDD=15 VGS=10V , RG=3, ID=30A | - | 7 | - | nS |
| Rise Time | Tr | - | 13.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 33 | - | nS | |
| Fall Time | Tf | - | 11 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 26 | - | nS |
| Reverse recovery charge | Qrr | - | 11 | - | nC | |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
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