N Channel Power MOSFET Siliup SP010N04BGTH 100V Featuring Split Gate Trench Technology for Portable Equipment
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010N04BGTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This advanced MOSFET utilizes Split Gate Trench Technology, offering fast switching speeds, low gate charge, and low RDS(on). It is designed for high-efficiency applications such as DC-DC converters, motor control, and portable equipment. The device is 100% single pulse avalanche energy tested, ensuring reliability in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04BGTH
- Technology: Advanced Split Gate Trench Technology
- Package: TO-252
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on)TYP | - | @10V | - | 5 | - | m |
| RDS(on)TYP | - | @4.5V | - | 6.5 | - | m |
| ID | - | - | - | - | 120 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25C) | ID | - | - | - | 120 | A |
| Continuous Drain Current (Tc=100C) | ID | - | - | - | 80 | A |
| Pulse Drain Current | IDM | Tested | - | - | 480 | A |
| Single pulsed avalanche energy | EAS | - | - | 306 | - | mJ |
| Power Dissipation (Tc=25C) | PD | - | - | - | 160 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 0.78 | - | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.7 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 5 | 6.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 6.5 | 8.7 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2970 | - | pF |
| Output Capacitance | Coss | - | - | 1125 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 24 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | - | 27 | - | - |
| Gate-Drain Charge | Qgd | - | - | 7.3 | - | - |
| Turn-On Delay Time | Td(on) | VDD=50V , VGS=10V , RG=3 , ID=50A | - | 12.1 | - | nS |
| Rise Time | Tr | - | - | 17.4 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 47 | - | - |
| Fall Time | Tf | - | - | 32 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | - | 120 | A |
| Reverse recover time | Trr | IS=50A, di/dt=100A/us, Tj=25 | - | 32 | - | nS |
| Reverse recovery charge | Qrr | - | - | 146 | - | nC |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | - | - | - | - |
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | - | - | - | - |
| b | 0.660 - 0.860 | 0.026 - 0.034 | - | - | - | - |
| c | 0.460 - 0.580 | 0.018 - 0.023 | - | - | - | - |
| D | 6.500 - 6.700 | 0.256 - 0.264 | - | - | - | - |
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | - | - | - | - |
| D2 | 4.830 REF. | 0.190 REF. | - | - | - | - |
| E | 6.000 - 6.200 | 0.236 - 0.244 | - | - | - | - |
| e | 2.186 - 2.386 | 0.086 - 0.094 | - | - | - | - |
| L | 9.800 - 10.400 | 0.386 - 0.409 | - | - | - | - |
| L1 | 2.900 REF. | 0.114 REF. | - | - | - | - |
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | - | - | - | - |
| L3 | 1.600 REF. | 0.063 REF. | - | - | - | - |
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | - | - | - | - |
| 1.100 - 1.300 | 0.043 - 0.051 | - | - | - | - | |
| 0 - 8 | 0 - 8 | - | - | - | - | |
| h | 0.000 - 0.300 | 0.000 - 0.012 | - | - | - | - |
| V | 5.350 REF. | 0.211 REF. | - | - | - | - |
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