Compact DFN1006-3L P Channel MOSFET Siliup SP2004KNC with 20V Drain Source Voltage and 2KV ESD Protection
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP2004KNC is a 20V P-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV and is available in a compact DFN1006-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: DFN1006-3L
- ESD Protection: 2KV
- Device Code: 04K
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 400 | m | |||
| RDS(on) | @-2.5V | 550 | m | |||
| ID | -0.7 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.7 | A | |||
| Pulse Drain Current | IDM | Tested | -2.8 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | - | 400 | 550 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | - | 550 | 700 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-16V , VGS=0V , f=1MHz | - | 113 | - | pF |
| Output Capacitance | Coss | - | 15 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-300mA | - | 1.9 | - | nC |
| Gate-Source Charge | Qgs | - | 0.4 | - | ||
| Gate-Drain Charge | Qgd | - | 0.31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA | - | 9 | - | nS |
| Turn-On Rise Time | tr | - | 5.7 | - | ||
| Turn-Off Delay Time | td(off) | - | 32.6 | - | ||
| Turn-Off Fall Time | tf | - | 20.3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (DFN1006-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 0.46 | 0.51 | ||||
| A1 | 0 | 0.05 | ||||
| b | 0.45 | 0.55 | ||||
| b1 | 0.1 | 0.2 | ||||
| c | 0.08 | 0.18 | ||||
| D | 0.95 | 1.05 | ||||
| D1 | 0.65 | |||||
| E | 0.55 | 0.65 | ||||
| E1 | 0.325 | |||||
| L | 0.2 | 0.3 | ||||
| L1 | 0.2 | 0.3 | ||||
| R | 0.05 | 0.15 | ||||
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