N Channel MOSFET Siliup 2N7002B 60V ESD Protected Device Ideal for Battery Switch and DC DC Converter

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Product Description

Product Overview

The 2N7002B is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this ESD-protected device offers high power and current handling capabilities. It is suitable for use in battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Model: 2N7002B
Package: SOT-23
Circuit Diagram Marking: 7002
ESD Protection: 2KV

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
Static Drain-Source On-Resistance	RDS(on)	@10V		1.7
Static Drain-Source On-Resistance	RDS(on)	@4.5V		1.8
Continuous Drain Current	ID			300		mA
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	(Ta=25)		60		V
Gate-Source Voltage	VGSS	(Ta=25)		20		V
Continuous Drain Current	ID	(Ta=25)		300		mA
Pulse Drain Current	IDM	(Tested)		1200		mA
Power Dissipation	PD	(Ta=25)		350		mW
Thermal Resistance Junction-to-Ambient	RJA	(Ta=25)		357		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	1	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =500mA	-	1.7	3
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =200mA	-	1.8	4
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	28	-	pF
Output Capacitance	Coss	VDS=25V , VGS=0V , f=1MHz	-	10	-	pF
Reverse Transfer Capacitance	Crss	VDS=25V , VGS=0V , f=1MHz	-	5	-	pF
Total Gate Charge	Qg	VDS=10V , VGS=4.5V , ID=300mA	-	1.7	-	nC
Gate-Source Charge	Qgs	VDS=10V , VGS=4.5V , ID=300mA	-	0.35	-	nC
Gate-Drain Charge	Qg	VDS=10V , VGS=4.5V , ID=300mA	-	0.5	-	nC
Turn-On Delay Time	td(on)	VDD=30V VGS=10V , RG=25 , ID=300mA	-	3	-	nS
Turn-On Rise Time	tr	VDD=30V VGS=10V , RG=25 , ID=300mA	-	17	-	nS
Turn-Off Delay Time	td(off)	VDD=30V VGS=10V , RG=25 , ID=300mA	-	10	-	nS
Turn-Off Fall Time	tf	VDD=30V VGS=10V , RG=25 , ID=300mA	-	21	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V